SI2321DS

Si2321DS New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES D TrenchFETr Power MOSFETS ID (A) - 3.3 - 2.8 - 2.3 rDS(on) (W) 0.057 @ VGS = - 4.5 V 0.076 @ VGS = - 2.5 V 0.110 @ VGS = - 1.8 V APPLICATIONS D Load Switch D PA Switch TO-236 (SOT-23) G 1 3 S 2 D Ordering Information: Si2321DS-T1 Top View Si2321DS *(D1) *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currenta Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C PD TJ, Tstg TA= 25_C TA= 70_C ID IDM IS - 0.74 0.89 0.57 - 55 to 150 Symbol VDS VGS 5 sec - 20 "8 - 3.3 - 2.6 - 12 Steady State Unit V - 2.9 - 2.3 A - 0.59 0.71 0.45 W _C THERMAL RESISTANCE RATINGS Parameter t  5 sec. Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board. b. t v5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72210 S-03986—Rev. A, 19-May-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 115 140 60 Maximum 140 175 75 Unit _C/W 1 Si2321DS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = - 10 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 3.3 A Drain-Source On-Resistancea rDS(on) () VGS = - 2.5 V, ID = - 2.8 A VGS = - 1.8 V, ID = - 2.3 A Forward Transconductancea Diode Forward Voltage gfs VSD VDS = - 5 V, ID = - 3.3 A IS = - 1.6 A, VGS = 0 V -6 0.044 0.061 0.084 3 - 1.2 0.057 0.076 0.110 S V W - 20 - 0.40 - 0.90 "100 -1 - 10 mA A V nA Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = - 6 V, VGS = 0, f = 1 MHz VDS = - 6 V, VGS = - 4.5 V ID ^ - 3.3 A 3.3 8 1.2 2.2 715 170 120 pF 13 nC Switchingb td(on) Turn-On Turn On Time tr td(off) tf Notes a. b. c. For DESIGN AID ONLY, not subject to production testing. Pulse test: PW v300 ms duty cycle v2%. Switching time is essentially independent of operating temperature. VDD = - 6 V, RL = 6 W ID ^ - 1.0 A, VGEN = - 4.5 V 45 RG = 6 W 15 35 60 40 25 55 ns 90 60 TurnTurn-Off Time Time www.vishay.com 2 Document Number: 72210 S-03986—Rev. A, 19-May-03 Si2321DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 12 VGS = 4.5 thru 2.5 V 10 2V 10 12 Vishay Siliconix Transfer Characteristics I D - Drain Current (A) 8 I D - Drain Current (A) 8 6 1.5 V 4 6 4 TC = 125_C 2 25_C - 55_C 2 0.5 V 0 0.0 1.0 V 1.6 2.0 0.4 0.8 1.2 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.30 1200 Capacitance r DS(on) - On-Resistance ( W ) 0.25 C - Capacitance (pF) 900 Ciss 0.20 0.15 VGS = 1.8 V 0.10 VGS = 2.5 V 600 300 Coss 0.05 VGS = 4.5 V 0.00 0 2 4 6 8 10 12 0 0 4 Crss 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 3.3 A Normalized On-Resistance vs. Junction Temperature 1.5 VGS = 4.5 V ID = 3.3 A 3 r DS(on) - On-Resistance (W ) (Normalized) 4 6 8 10 4 1.3 1.1 2 0.9 1 0.7 0 0 2 0.5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 72210 S-03986—Rev. A, 19-May-03 www.vishay.com 3 Si2321DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on) - On-Resistance ( W ) 0.4 I S - Source Current (A) 0.5 On-Resistance vs. Gate-to-Source Voltage 0.3 TJ = 150_C 1 TJ = 25_C 0.2 ID = 3.3 A 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 1 2 3 4 5 6 7 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 8 10 Single Pulse Power 0.3 V GS(th) Variance (V) 0.2 Power (W) 6 0.1 4 TA = 25_C 0.0 2 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area 100 Limited by rDS(on) 10 I D - Drain Current (A) 100 ms, 10 ms 1 1 ms 10 ms 100 ms 0.1 TA = 25_C Single Pulse dc, 100 s, 10 s, 1 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com Document Number: 72210 S-03986—Rev. A, 19-May-03 4 Si2321DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72210 S-03986—Rev. A, 19-May-03 www.vishay.com 5