SI2323DS-T1-E3

Si2323DS Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.039 at VGS = - 4.5 V 0.052 at VGS = - 2.5 V 0.068 at VGS = - 1.8 V ID (A) - 4.7 - 4.1 - 3.5 FEATURES • TrenchFET® Power MOSFET Pb-free APPLICATIONS • Load Switch • PA Switch Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S 2 D Top View Si2323DS (D3)* * Marking Code Ordering Information: Si2323DS-T1 Si2323DS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg - 1.0 1.25 0.8 - 55 to 150 - 4.7 - 3.8 - 20 - 0.6 0.75 0.48 W °C 5s ±8 - 3.7 - 2.9 A Steady State - 20 Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol t≤5s Steady State Steady State RthJA RthJF Typical 75 120 40 Maximum 100 166 50 Unit °C/W Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72024 S-81954-Rev. C, 25-Aug-08 www.vishay.com 1 Si2323DS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamic b Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Test Conditions VGS = 0 V, ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 8 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 55 °C VDS ≤ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 4.7 A VGS = - 2.5 V, ID = - 4.1 A VGS = - 1.8 V, ID = - 2.0 A VDS = - 5 V, ID = - 4.7 A IS = - 1.0 A, VGS = 0 V Min. - 20 - 0.40 Typ. Max. Unit - 1.0 ± 100 -1 - 10 V nA µA A - 20 0.031 0.041 0.054 16 - 0.7 - 1.2 0.039 0.052 0.068 Ω S V Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switchingc Turn-On Time Turn-Off Time VDS = - 10 V, VGS = - 4.5 V ID ≅ - 4.7 A 12.5 1.7 3.3 1020 191 140 19 nC VDS = - 10 V, VGS = 0 V, f = 1 MHz pF VDD = - 10 V, RL = 10 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V RG = 6 Ω 25 43 71 48 40 65 110 75 ns Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72024 S-81954-Rev. C, 25-Aug-08 Si2323DS Vishay Siliconix TYPICAL CHARACTERISTICS 20 VGS = 5 thru 2.5 V 16 2V 25 °C, unless otherwise noted 20 TC = - 55 °C 16 I D - Drain Current (A) 25 °C 125 °C 12 I D - Drain Current (A) 12 8 1.5 V 4 1V 0 0 1 2 3 4 5 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.15 1800 Transfer Characteristics R DS(on) - On-Resistance (Ω) 0.12 C - Capacitance (pF) 1500 1200 Ciss 900 0.09 VGS = 1.8 V 0.06 VGS = 2.5 V 600 0.03 VGS = 4.5 V 0.00 0 4 8 12 16 20 300 Crss 0 0 4 8 Coss 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 VDS = 6 V ID = 4.7 A R DS(on) - On-Resistance 1.5 1.4 1.3 1.2 (Normalized) 1.1 1.0 0.9 0.8 0.7 0 0 3 6 9 12 15 0.6 - 50 VGS = 4.5 V ID = 4.7 A Capacitance VGS - Gate-to-Source Voltage (V) 4 3 2 1 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 72024 S-81954-Rev. C, 25-Aug-08 www.vishay.com 3 Si2323DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 R DS(on) - On-Resistance (Ω) 0.12 ID = 4.7 A 0.09 ID = 2 A 0.06 0.15 I S - Source Current (A) TJ = 150 °C TJ = 25 °C 1 0.03 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 12 On-Resistance vs. Gate-to-Source Voltage 0.3 ID = 140 µA VGS(th) Variance (V) 0.2 Power (W) 10 8 0.1 6 0.0 4 TA = 25 °C - 0.1 2 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 Time (s) 100 600 TJ - Temperature (°C) Threshold Voltage 100 IDM Limited Limited by RDS(on)* 10 I D - Drain Current (A) Single Pulse Power P(t) = 0.0001 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 72024 S-81954-Rev. C, 25-Aug-08 Si2323DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 120 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72024. Document Number: 72024 S-81954-Rev. C, 25-Aug-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1