SI2323DS

Si2323DS New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 FEATURES D TrenchFETr Power MOSFET ID (A) -4.7 - 4.1 - 3.5 rDS(on) (W) 0.039 @ VGS = -4.5 V 0.052 @ VGS = -2.5 V 0.068 @ VGS = -1.8 V APPLICATIONS D Load Switch D PA Switch TO-236 (SOT-23) G 1 3 S 2 D Top View Si2323DS (D3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 sec -20 $8 - 4.7 -3.8 -20 -1.0 1.25 0.8 Steady State Unit V -3.7 -2.9 A -0.6 0.75 0.48 -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 72024 S-22121—Rev. B, 25-Nov-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 75 120 40 Maximum 100 166 50 Unit _C/W 1 Si2323DS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 55_C VDS v -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -4.7 A Drain-Source On-Resistancea rDS(on) VGS = -2.5 V, ID = -4.1 A VGS = -1.8 V, ID = -2.0 A Forward Transconductancea Diode Forward Voltage gfs VSD VDS = -5 V, ID = -4.7 A IS = -1.0 A, VGS = 0 V -20 0.031 0.041 0.054 16 0.7 -1.2 0.039 0.052 0.068 S V W -20 V -0.40 -1.0 "100 -1 -10 mA A nA Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = -4.5 V ID ^ -4.7 A 12.5 1.7 3.3 1020 191 140 pF 19 nC Switchingc td(on) Turn-On Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. VDD = -10 V, RL = 10 W ID ^ -1.0 A, VGEN = -4.5 V RG = 6 W 25 43 71 48 40 65 ns 110 75 Turn-Off Time www.vishay.com 2 Document Number: 72024 S-22121—Rev. B, 25-Nov-02 Si2323DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 16 I D - Drain Current (A) 2V I D - Drain Current (A) 16 20 TC = -55_C 25_C Vishay Siliconix Transfer Characteristics 12 12 125_C 8 1.5 V 8 4 1V 0 0 1 2 3 4 5 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 1800 Capacitance r DS(on) - On-Resistance ( W ) 0.12 C - Capacitance (pF) 1500 1200 Ciss 0.09 VGS = 1.8 V 0.06 VGS = 2.5 V 900 600 Coss Crss 0.03 VGS = 4.5 V 0.00 0 4 8 12 16 20 300 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 4.7 A 1.5 1.4 r DS(on) - On-Resistance ( W) (Normalized) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0 0 3 6 9 12 15 0.6 -50 On-Resistance vs. Junction Temperature 4 VGS = 4.5 V ID = 4.7 A 3 2 1 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 72024 S-22121—Rev. B, 25-Nov-02 www.vishay.com 3 Si2323DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on) - On-Resistance ( W ) 0.12 0.15 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C TJ = 25_C 1 0.09 ID = 2 A 0.06 ID = 4.7 A 0.03 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 140 mA 12 10 Single Pulse Power 0.3 V GS(th) Variance (V) 0.2 Power (W) 8 0.1 6 0.0 4 TA = 25_C -0.1 2 -0.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area 100 IDM Limited rDS(on) Limited 10 I D - Drain Current (A) P(t) = 0.0001 P(t) = 0.001 1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72024 S-22121—Rev. B, 25-Nov-02 Si2323DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72024 S-22121—Rev. B, 25-Nov-02 www.vishay.com 5