SI2343DS

Si2343DS New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 FEATURES D TrenchFETr Power MOSFET ID (A) -4.0 -3.1 rDS(on) (W) 0.053 @ VGS = -10 V 0.086@ VGS = -4.5 V APPLICATIONS D Load Switch D PA Switch TO-236 (SOT-23) G 1 3 S 2 D Top View Si2343DS (F3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 sec -30 Steady State $20 Unit V - 4.0 -3.2 -15 -1.0 1.25 0.8 -55 to 150 -3.1 -2.5 A -0.6 0.75 0.48 W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 72079 s-22199—Rev. A, 25-Nov-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 75 120 40 Maximum 100 166 50 Unit _C/W 1 Si2343DS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 55_C VDS v -5 V, VGS = -10 V VGS = -10 V, ID = -4.0 A VGS = -4.5 V, ID = -3.1 A VDS = -5 V, ID = -4.0 A IS = -1.0 A, VGS = 0 V -15 0.043 0.068 10 0.7 -1.2 0.053 0.086 W S V -30 -1 -3 "100 -1 -10 mA A V nA Symbol Test Conditions Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -15 V, VGS = 0, f = 1 MHz VDS = -15 V, VGS = -10 V ID ^ -4.0 A 14 1.9 3.7 540 131 105 pF 21 nC Switchingc td(on) Turn-On Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. VDD = -15 V, RL = 15 W ID ^ -1.0 A, VGEN = -10 V RG = 6 W 10 15 31 20 15 25 ns 50 30 Turn-Off Time www.vishay.com 2 Document Number: 72079 s-22199—Rev. A, 25-Nov-02 Si2343DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 10 thru.5 V 12 I D - Drain Current (A) I D - Drain Current (A) 4V 12 15 Vishay Siliconix Transfer Characteristics 9 9 6 3V 3 6 TC = 125_C 3 25_C -55 _C 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.12 1000 Capacitance r DS(on) - On-Resistance ( W ) 0.10 VGS = 4.5 V C - Capacitance (pF) 800 Ciss 600 0.08 0.06 VGS = 10 V 400 0.04 0.02 200 Crss Coss 0.00 0 3 6 9 12 15 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS =15 V ID = 4.0 A 1.6 On-Resistance vs. Junction Temperature 6 r DS(on) - On-Resistance ( W) (Normalized) 8 1.4 VGS = 4.0 V ID = 4.0 A 1.2 4 1.0 2 0.8 0 0 3 6 9 12 15 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 72079 s-22199—Rev. A, 25-Nov-02 www.vishay.com 3 Si2343DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.12 ID = 4.0 A On-Resistance vs. Gate-to-Source Voltage 0.10 r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 0.08 ID = 1 A TJ = 150_C TJ = 25_C 0.06 0.04 0.02 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 ID = 250 mA 0.4 V GS(th) Variance (V) 8 0.2 Power (W) 12 10 Single Pulse Power 6 0.0 4 TA = 25_C -0.2 2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area 100 IDM Limited rDS(on) Limited 10 I D - Drain Current (A) P(t) = 0.0001 1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 10 100 0.1 0.01 0.1 1 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72079 s-22199—Rev. A, 25-Nov-02 Si2343DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72079 s-22199—Rev. A, 25-Nov-02 www.vishay.com 5