SI3410DV

New Product Si3410DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0195 at VGS = 10 V 0.023 at VGS = 4.5 V ID (A)a 8 8 Qg (Typ) 9.2 nC FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Notebook Load Switch • Low Current DC/DC RoHS COMPLIANT TSOP-6 Top View D 1 6 D D (1, 2, 5, 6) 3 mm D 2 5 D Marking Code G 3 4 S AM XXX Lot Traceability and Date Code Part # Code 2.85 mm S Ordering Information: Si3410DV-T1-E3 (Lead (Pb)-free) N-Channel MOSFET (4) G (3) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 30 ± 20 8a 8a 7.5b,c 5.9b,c 30 2.7 1.7b,c 4.1 2.6 2b,c 1.25b,c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID A Pulsed Drain Current Continuous Source-Drain Diode Current IDM IS Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot Notes: a. Package Limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. Document Number: 69254 S-72070-Rev. A, 08-Oct-07 www.vishay.com 1 t≤5s Steady State Symbol RthJA RthJF Typical 45 25 Maximum 62.5 30 Unit °C/W New Product Si3410DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 3 A, di/dt = 100 A/µs, TJ = 25 °C IS = 1.7 A, VGS = 0 V 0.77 21 15 13 8 TC = 25 °C 2.7 30 1.2 40 30 A V ns nC ns VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 5 A VDS = 15 V, VGS = 4.5 V, ID = 5 A VDS = 15 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 5 A VGS = 4.5 V, ID = 4 A VDS = 10 V, ID = 5 A 20 0.016 0.019 24 1295 170 72 21.8 9.2 3.8 2.5 2.4 21 14 20 9 10 8 21 8 40 25 40 18 20 16 35 16 ns Ω 33 14 nC pF 0.0195 0.023 1 30 33 - 6.2 3 ± 100 1 10 V mV/°C V nA µA A Ω S Symbol Test Condition Min Typ Max Unit Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69254 S-72070-Rev. A, 08-Oct-07 New Product Si3410DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 VGS = 10 V thru 4 V 24 I D - Drain Current (A) I D - Drain Current (A) 1.2 1.5 18 0.9 12 0.6 TC = 25 °C 0.3 TC = 125 °C TC = - 55 °C 6 VGS = 3 V 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.030 1600 Transfer Characteristics Ciss r DS(on) - On-Resistance (Ω) 0.026 C - Capacitance (pF) 1280 0.022 VGS = 4.5 V 960 0.018 640 0.014 VGS = 10 V 320 Coss Crss 0 6 12 18 24 30 0.010 0 6 12 18 24 30 0 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 5 A VGS - Gate-to-Source Voltage (V) 8 rDS(on) - On-Resistance (Normalized) VDS = 10 V VDS = 15 V 6 VDS = 20 V 1.5 1.7 ID = 5 A Capacitance VGS = 10 V 1.3 VGS = 4.5 V 1.1 4 2 0.9 0 0 5 10 15 20 25 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 69254 S-72070-Rev. A, 08-Oct-07 www.vishay.com 3 New Product Si3410DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.10 1 TJ = 150 °C r DS(on) - On-Resistance (Ω) 10 I S - Source Current (A) 0.08 0.06 0.1 TJ = 25 °C 0.04 TA = 125 °C 0.02 TA = 25 °C 0.01 0.001 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.6 ID = 250 µA 0.3 VGS(th) Variance (V) On-Resistance vs. Gate-to-Source Temperature 60 48 Power (W) 0 ID = 5 mA 36 - 0.3 24 - 0.6 12 - 0.9 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (s) 1 10 TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by r DS(on)* 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69254 S-72070-Rev. A, 08-Oct-07 New Product Si3410DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 12 10 I D - Drain Current (A) Package Limited 7 5 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 5 1.5 4 1.2 3 Power Power 2 1 0 0 25 50 75 100 125 150 0.9 0.6 0.3 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69254 S-72070-Rev. A, 08-Oct-07 www.vishay.com 5 New Product Si3410DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.00 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: PDM t1 0.1 0.10 0.05 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69254. www.vishay.com 6 Document Number: 69254 S-72070-Rev. A, 08-Oct-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1