SI3420DV-T1

Si3420DV Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES ID (A) 0.5 PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) 3.7 @ VGS = 10 V D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.85 mm (4) S Ordering Information: Si3420DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0 1 mH 0.1 TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg 5 secs 200 "20 0.5 0.4 1 1 0.05 1 2.1 1.34 Steady State Unit V 0.37 0.29 A mJ A 1.14 0.73 W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71097 S-31725—Rev. B, 18-Aug-03 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 35 Maximum 60 110 42 Unit _C/W 1 Si3420DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 0.35 A VDS = 15 V, ID = 1 A IS = 1 A, VGS = 0 V 9 1.2 1 3.7 2.0 "100 1 25 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1 A, di/dt = 100 A/ms VDD = 100 V, RL = 100 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 7 8 10 30 140 VDS = 100 V, VGS = 10 V, ID = 0.5 A 2.2 0.65 0.95 2.5 12 13 15 50 225 ns W 3.5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 2.0 VGS = 10 thru 8 V 1.5 I D - Drain Current (A) I D - Drain Current (A) 7V 1.0 1.5 125_C 1.0 2.0 TC = - 55_C 25_C Transfer Characteristics 6V 0.5 4V 0.0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 5V 0.5 0.0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71097 S-31725—Rev. B, 18-Aug-03 Si3420DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 7 r DS(on) - On-Resistance ( W ) 6 C - Capacitance (pF) 5 4 VGS = 10 V 3 2 1 0 0.0 120 100 Ciss 80 60 40 Coss 20 0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 Crss Capacitance ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 20 V GS - Gate-to-Source Voltage (V) VDS = 100 V ID = 0.5 A 16 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 0.35 A 2.0 12 r DS(on) - On-Resistance (W ) (Normalized) 2 3 4 1.5 8 1.0 4 0.5 0 0 1 Qg - Total Gate Charge (nC) 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 1 r DS(on) - On-Resistance ( W ) TJ = 150_C 8 ID = 0.35 A 6 0.1 TJ = 25_C 0.01 4 2 0.001 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71097 S-31725—Rev. B, 18-Aug-03 www.vishay.com 3 Si3420DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.9 0.6 V GS(th) Variance (V) ID = 250 mA 0.3 Power (W) 12 TA = 25_C 8 0.0 - 0.3 - 0.6 - 0.9 - 50 4 20 Single Pulse Power 16 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71097 S-31725—Rev. B, 18-Aug-03