SI3422DV

Si3422DV New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) 5 @ VGS = 10 V ID (A) "0.42 (1, 2, 5, 6) D TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (4) S N-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current Pulsed Drain Current (10 ms Pulse Width) Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH .1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg 5 secs 200 "20 "0.42 "0.34 Steady State Unit V "0.31 "0.25 "0.75 "0.75 0.028 "1 mJ A 1.14 0.73 –55 to 150 _C W A 2.1 1.34 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71098 S-99344—Rev. A, 22-Nov-98 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 35 Maximum 60 110 42 Unit _C/W 2-1 Si3422DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 0.35 A VDS = 15 V, ID = 1 A IS = 1 A, VGS = 0 V 10 1.2 0.75 5 2 "100 1 25 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1 A, di/dt = 100 A/ms VDD = 100 V, RL = 100 W 100 V, 100 ID ^ 0.75 A, VGEN = 10 V RG = 6 W 75 A 10 V, VDS = 100 V VGS = 10 V ID = 0.5 A 100 V, 10 V, 5 2.1 0.5 0.9 8 8 9 30 130 13 13 15 50 210 ns 3.4 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.5 VGS = 10 thru 8 V 7V I D – Drain Current (A) 1.0 I D – Drain Current (A) 1.0 1.5 TC = –55_C 25_C 125_C Transfer Characteristics 6V 0.5 5V 4V 0 0 2 4 6 8 10 0.5 0 0 2 4 6 8 10 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 71098 S-99344—Rev. A, 22-Nov-98 Si3422DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 8 r DS(on) – On-Resistance ( W ) 120 Vishay Siliconix Capacitance 100 6 VGS = 10 V C – Capacitance (pF) 80 Ciss 60 4 40 Coss Crss 2 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 20 40 60 80 100 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 20 V GS – Gate-to-Source Voltage (V) VDS = 100 V ID = 0.5 A 16 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 0.35 A 2.0 12 r DS(on) – On-Resistance (W) (Normalized) 2 3 4 1.5 8 1.0 4 0.5 0 0 1 Qg – Total Gate Charge (nC) 0 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 TJ = 150_C I S – Source Current (A) 1 20 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) 16 12 ID = 0.35 A 8 0.1 TJ = 25_C 0.01 4 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD – Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) Document Number: 71098 S-99344—Rev. A, 22-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-3 Si3422DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 20 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA Power (W) 0.0 16 12 TA = 25_C 8 –0.3 –0.6 4 –0.9 –50 –25 0 25 50 75 100 125 150 0 10–3 10–2 10–1 1 10 100 600 TJ – Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71098 S-99344—Rev. A, 22-Nov-98