Si3424DV
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.028 @ VGS = 10 V 0.038 @ VGS = 4.5 V
ID (A)
6.7 5.7
(1, 2, 5, 6) D
TSOP-6 Top View
1 6 (3) G
3 mm
2
5
3
4 (4) S N-Channel MOSFET
2.85 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
5 secs
30 "20 6.7
Steady State
Unit
V
5.0 4.0 30 A 1.0 1.14 0.73 –55 to 150 W _C
ID IDM IS PD TJ, Tstg
5.4
1.7 2.0 1.3
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71317 S-02157—Rev. A, 02-Oct-00 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
40 90 25
Maximum
62.5 110 30
Unit
_C/W
1
Si3424DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 6.7A VGS = 4.5 V, ID = 5.7A VDS = 10 V, ID = 6.7A IS = 1.7 A, VGS = 0 V 30 0.023 0.032 14 0.8 1.2 0.028 0.038 S V 0.8 "100 1 5 V nA mA A W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 6.7 A 11.5 1.6 3.2 7 10 20 11 40 15 20 40 20 80 ns 18 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 VGS = 10 thru 5 V 24 I D – Drain Current (A) 4V I D – Drain Current (A) 24 30 TC = –55_C 25_C 125_C 18
Transfer Characteristics
18
12
3V
12
6 2V 0 0 1 2 3 4
6
0 0 1 2 3 4 5
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
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2
Document Number: 71317 S-02157—Rev. A, 02-Oct-00
Si3424DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05 r DS(on) – On-Resistance ( W ) 800
Vishay Siliconix
Capacitance
C – Capacitance (pF)
0.04 VGS = 4.5 V 0.03 VGS = 10 V 0.02
600
Ciss
400 Coss 200
0.01 Crss 0.00 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Gate Charge
10 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 6.7 A 8 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 6.7 A 1.4
6
r DS(on) – On-Resistance (W ) (Normalized) 6 9 12
1.2
4
1.0
2
0.8
0 0 3 Qg – Total Gate Charge (nC)
0.6 –50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
Source-Drain Diode Forward Voltage
100 0.05
On-Resistance vs. Gate-to-Source Voltage
r DS(on) – On-Resistance ( W )
0.04
I S – Source Current (A)
0.03 ID = 6.7 A 0.02
10
TJ = 150_C
TJ = 25_C
0.01
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
Document Number: 71317 S-02157—Rev. A, 02-Oct-00
www.vishay.com
3
Si3424DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 50
Single Pulse Power
0.2 V GS(th) Variance (V) ID = 250 mA –0.0 Power (W)
40
30
–0.2
20
–0.4 10
–0.6
–0.8 –50
–25
0
25
50
75
100
125
150
0 10–3
10–2
10–1
1
10
100
600
TJ – Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 PDM
2. Per Unit Base = RthJA = 90_C/W
Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec)
3. TJM – TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com
4
Document Number: 71317 S-02157—Rev. A, 02-Oct-00
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