SI3430DV-T1

Si3430DV Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES ID (A) 2.4 2.3 rDS(on) (W) 0.170 @ VGS = 10 V 0.185 @ VGS = 6.0 V D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.85 mm (4) S Ordering Information: Si3430DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C L = 0 1 mH 0.1 TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IAR EAR IS PD TJ, Tstg 5 secs 100 "20 2.4 1.7 8 6 1.8 1.7 2.0 1.0 Steady State Unit V 1.8 1.3 A mJ 1.0 1.14 0.59 A W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71235 S-31725—Rev. B, 18-Aug-03 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3430DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 2.4 A VGS = 6.0 V, ID = 2.3 A VDS = 15 V, ID = 2.4 A IS = 1.7 A, VGS = 0 V 8 0.148 0.160 7 0.8 1.2 0.170 0.185 2 "100 1 25 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf Rg trr VGS = 0.1 V, f = 5 MHz IF = 1.7 A, di/dt = 100 A/ms VDD = 50 V, RL = 50 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 1 9 11 16 9 2.8 50 80 VDS = 50 V, VGS = 10 V, ID = 2.4 A 5.5 1.5 1.4 4 20 20 30 20 W ns ns W 6.6 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VGS = 10 thru 6 V 5V 6 I D - Drain Current (A) I D - Drain Current (A) 6 8 Transfer Characteristics 4 4 2 4V 0 0.0 2 TC = 125_C 25_C - 55_C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71235 S-31725—Rev. B, 18-Aug-03 www.vishay.com 2 Si3430DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.25 r DS(on) - On-Resistance ( W ) 500 Capacitance VGS = 6.0 V 0.15 VGS = 10 V C - Capacitance (pF) 0.20 400 Ciss 300 0.10 200 0.05 100 Crss Coss 0.00 0 2 4 ID - Drain Current (A) 6 8 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 50 V ID = 2.4 A 8 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) 0.6 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.4 A 6 4 2 r DS(on) - On-Resistance (W ) (Normalized) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.4 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.3 ID = 2.4 A TJ = 150_C 0.2 0.1 TJ = 25_C 1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71235 S-31725—Rev. B, 18-Aug-03 www.vishay.com 3 Si3430DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) - 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 50 5 0 0.01 ID = 250 mA 20 Power (W) 30 25 Single Pulse Power 15 10 - 25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71235 S-31725—Rev. B, 18-Aug-03