SI3434DV

Si3434DV New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.034 @ VGS = 4.5 V 0.050 @ VGS = 2.5 V ID (A) 6.1 5.0 D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area APPLICATIONS D Li-lon Battery Protection (1, 2, 5, 6) D TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (4) S N-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 5 secs 30 "12 6.1 Steady State Unit V 4.6 3.6 30 A 1.0 1.14 0.73 –55 to 150 W _C ID IDM IS PD TJ, Tstg 4.9 1.7 2.0 1.3 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71610 S-03617—Rev. A, 17-Apr-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 40 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3434DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "12 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 6.1 A VGS = 2.5 V, ID = 2 A VDS = 10 V, ID = 6.1 A IS = 1.7 A, VGS = 0 V 30 0.028 0.042 20 0.8 1.2 0.034 0.050 S V 0.6 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 15 V, VGS = 4.5 V, ID = 6.1 A 8 1.9 2.6 21 45 40 30 40 40 90 80 60 80 ns 12 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 3.5 V 24 I D – Drain Current (A) I D – Drain Current (A) 3V 24 30 TC = –55_C 25_C 125_C 18 Transfer Characteristics 18 2.5 V 12 12 6 2V 1.5 V 6 0 0 1 2 3 4 5 0 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71610 S-03617—Rev. A, 17-Apr-01 Si3434DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) – On-Resistance ( W ) 1200 Vishay Siliconix Capacitance C – Capacitance (pF) 0.08 1000 Ciss 800 0.06 VGS = 2.5 V 0.04 600 VGS = 4.5 V 400 Coss Crss 0.02 200 0.00 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 6.1 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 6.1 A 1.4 3 r DS(on) – On-Resistance (W ) (Normalized) 4 6 8 10 1.2 2 1.0 1 0.8 0 0 2 Qg – Total Gate Charge (nC) 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage r DS(on) – On-Resistance ( W ) 0.08 ID = 2 A 0.06 ID = 6.1 A 0.04 I S – Source Current (A) 10 TJ = 150_C TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Document Number: 71610 S-03617—Rev. A, 17-Apr-01 www.vishay.com 3 Si3434DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.30 50 Single Pulse Power 0.15 V GS(th) Variance (V) ID = 1 mA 0.00 Power (W) 40 30 –0.15 20 –0.30 10 –0.45 –0.60 –50 –25 0 25 50 75 100 125 150 0 10–3 10–2 10–1 1 Time (sec) 10 100 600 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 90_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71610 S-03617—Rev. A, 17-Apr-01