SI3435DV

Si3435DV New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.036 @ VGS = - 4.5 V - 12 0.050 @ VGS = - 2.5 V 0.073 @ VGS = - 1.8 V ID (A) - 6.3 - 5.3 - 4.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID - 4.6 IDM IS - 1.7 2.0 1.0 - 55 to 150 - 20 - 0.9 1.1 0.6 W _C - 3.4 A Symbol VDS VGS 5 secs Steady State - 12 "8 Unit V - 6.3 - 4.8 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71318 S-03371—Rev. B, 03-Mar-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3435DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 85_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 6.3 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 5.3 A VGS = - 1.8 V, ID = - 2 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 5 V, ID = - 6.3 A IS = - 1.7 A, VGS = 0 V - 20 0.030 0.042 0.060 15 - 0.7 - 1.2 0.036 0.050 0.073 S V W - 0.45 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.7 A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 4.5 V, ID = - 6.3 A 15 3 3.3 18 45 90 80 30 36 90 180 160 50 ns 23 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 2V 12 16 20 Transfer Characteristics TC = - 55_C 25_C 12 125_C 8 8 1.5 V 4 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71318 S-03371—Rev. B, 03-Mar-03 www.vishay.com 2 Si3435DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.15 r DS(on) - On-Resistance ( W ) 2500 Vishay Siliconix Capacitance VGS = 1.8 V 0.09 C - Capacitance (pF) 0.12 2000 Ciss 1500 0.06 VGS = 2.5 V VGS = 4.5 V 1000 Coss 500 Crss 0.03 0.00 0 4 8 12 16 20 0 0 3 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 6.3 A 4 1.4 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 6.3 A 1.2 3 r DS(on) - On-Resistance (W ) (Normalized) 1.0 2 0.8 1 0 0 4 8 12 16 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.12 0.15 On-Resistance vs. Gate-to-Source Voltage 0.09 ID = 6.3 A 0.06 0.03 TJ = 25_C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71318 S-03371—Rev. B, 03-Mar-03 www.vishay.com 3 Si3435DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 30 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 24 18 TA = 25_C 12 0.1 0.0 6 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-To-Ambient 100 IDM Limited rDS(on) Limited 10 I D - Drain Current (A) P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71318 S-03371—Rev. B, 03-Mar-03 Si3435DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71318 S-03371—Rev. B, 03-Mar-03 www.vishay.com 5