SI3442BDV

Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.057 @ VGS = 4.5 V 0.090 @ VGS = 2.5 V ID (A) 4.2 3.4 TSOP-6 Top View 1 3 mm 6 5 (3) G 4 (1, 2, 5, 6) D 2 3 2.85 mm (4) S N-Channel MOSFET Ordering Information: Si3442BDV-T1—E3 Marking Code: 2Bxxx ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 20 "12 4.2 3.4 20 1.4 1.67 1.07 Steady State Unit V 3.0 2.4 A 0.72 0.86 0.55 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board, t v 5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72504 S-40424—Rev. C, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 75 120 70 Maximum 100 145 85 Unit _C/W 1 Si3442BDV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID( ) D(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 4.5 V VDS = 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 4 A VGS = 2.5 V, ID = 3.4 A VDS = 10 V, ID = 4.0 A IS = 1.6 A, VGS = 0 V 10 4 0.045 0.070 11.3 0.75 1.2 0.057 0.090 W S V 0.6 1.8 "100 1 5 V nA mA Symbol Test Condition Min Typ Max Unit A rDS(on) gfs VSD Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.6 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W f = 1 MHz VDS = 10 V, VGS = 4.5 V, ID = 4.0 A 3 0.65 0.95 2.7 35 50 20 15 30 55 75 30 25 60 ns W 5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 3.5 V 16 I D − Drain Current (A) 3V I D − Drain Current (A) 16 25_C 12 125_C 20 TC = −55_C Transfer Characteristics 12 2.5 V 8 8 4 2V 1.5 V 0 1 2 3 4 5 4 0 VDS − Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72504 S-40424—Rev. C, 15-Mar-04 2 Si3442BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.14 r DS(on) − On-Resistance ( W ) 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 4 8 12 16 20 VGS = 2.5 V C − Capacitance (pF) 480 400 320 240 160 80 Crss 0 0 4 8 12 16 20 Coss Ciss Capacitance VGS = 4.5 V ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 4 A 4 rDS(on) − On-Resiistance (Normalized) 1.2 1.4 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4 A 3 1.0 2 1 0.8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.6 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 TJ = 150_C I S − Source Current (A) 1 0.20 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) 0.16 ID = 4 A 0.12 0.1 TJ = 25_C 0.08 0.01 0.04 0.001 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72504 S-40424—Rev. C, 15-Mar-04 www.vishay.com 3 Si3442BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.3 0.2 0.1 V GS(th) Variance (V) −0.0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −50 0 0.01 2 Power (W) 4 ID = 250 mA 6 TA = 25_C Single Pulse 8 Single Pulse Power −25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 ms 100 ms 10 I D − Drain Current (A) 1 1 ms 10 ms 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 100 ms dc, 100 s, 10 s, 1 s 0.01 0.1 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 120_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72504 S-40424—Rev. C, 15-Mar-04