SI3442BDV_08

Si3442BDV Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) 0.057 at VGS = 4.5 V 0.090 at VGS = 2.5 V ID (A) 4.2 3.4 RoHS COMPLIANT TSOP-6 Top V iew 1 6 (1, 2, 5, 6) D 3 mm 2 5 (3) G 3 4 2.85 mm Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free) Marking Code: 2Bxxx (4) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 1.4 1.67 1.07 - 55 to 150 4.2 3.4 20 0.72 0.86 0.55 W °C 5s 20 ± 12 3.0 2.4 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 Board, t ≤ 5 s. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm. t≤5s Steady State Steady State Symbol RthJA RthJF Typical 75 120 70 Maximum 100 145 85 °C/W Unit Document Number: 72504 S-71947-Rev. D, 10-Sep-07 www.vishay.com 1 Si3442BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamic b a Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf trr Test Conditions VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 °C VDS = 5 V, VGS = 4.5 V VDS = 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 4 A VGS = 2.5 V, ID = 3.4 A VDS = 10 V, ID = 4.0 A IS = 1.6 A, VGS = 0 V Min 0.6 Typ Max 1.8 ± 100 1 5 Unit V nA µA A 10 4 0.045 0.070 11.3 0.75 1.2 0.057 0.090 Ω S V Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time 295 VDS = 10 V, VGS = 0 V, f = 1 MHz 75 45 3 VDS = 10 V, VGS = 4.5 V, ID = 4.0 A f = 1 MHz VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω IF = 1.6 A, di/dt = 100 A/µs 0.65 0.95 2.7 35 50 20 15 30 55 75 30 25 60 ns Ω 5 nC pF Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 VGS = 5 thru 3.5 V TC = - 55 °C 20 16 3V I D - Drain Current (A) 16 25 °C 12 125 °C 8 I D - Drain Current (A) 12 2.5 V 8 4 2V 1.5 V 4 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics www.vishay.com 2 Transfer Characteristics Document Number: 72504 S-71947-Rev. D, 10-Sep-07 Si3442BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 4 ID 8 12 16 20 80 Crss 0 0 4 8 12 16 20 Coss VGS = 2.5 V C - Capacitance (pF) 480 r DS(on) - On-Resistance (Ω) 400 Ciss 320 240 VGS = 4.5 V 160 Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 4 A 4 rDS(on) - On-Resistance (Normalized) 1.2 1.4 VGS = 4.5 V ID = 4 A Capacitance 3 1.0 2 0.8 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 0.20 On-Resistance vs. Junction Temperature 10 1 r DS(on) - On-Resistance (Ω) TJ = 150 °C I S - Source Current (A) 0.16 ID = 4 A 0.12 0.1 TJ = 25 °C 0.08 0.01 0.04 0.001 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 72504 S-71947-Rev. D, 10-Sep-07 www.vishay.com 3 Si3442BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.3 0.2 0.1 V GS(th) Variance (V) 0.0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 - 0.6 - 50 0 0.01 2 Power (W) ID = 250 µA 6 TA = 25 °C Single Pulse 4 8 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 0.1 1 Time (s) 10 100 600 Threshold Voltage 100 rDS(on) Limited 10 I D - Drain Current (A) IDM Limited 10 µs Single Pulse Power 100 µs 1 1 ms 10 ms 0.1 TA = 25 °C Single Pulse 100 ms DC, 100 s, 10 s, 1 s 0.01 0.1 BVDSS Limited 1 10 VDS - Drain-to-Source Voltage (V) 100 Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 120 °C/W Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72504. www.vishay.com 4 Document Number: 72504 S-71947-Rev. D, 10-Sep-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1