SI3445ADV

Si3445ADV New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) 0.042 @ VGS = −4.5 V 0.060 @ VGS = −2.5 V 0.080 @ VGS = −1.8 V ID (A) −5.8 −4.9 −4.2 TSOP-6 Top View 1 3 mm 6 5 (3) G (4) S 2 3 4 2.85 mm Ordering Information: Si3445ADV-T1—E3 Marking Code: C5XXX (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −8 "8 Unit V −5.8 −4.7 −20 −1.7 2.0 1.3 −55 to 150 −4.4 −3.5 A −0.9 1.1 0.7 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board, t v 5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72859 S-40582—Rev. A, 29-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 22 Maximum 62.5 110 30 Unit _C/W 1 Si3445ADV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "8 V VDS = −8 V, VGS = 0 V VDS = −8 V, VGS = 0 V, TJ = 70_C VDS = −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −5.8 A Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −4.9 A VGS = −1.8 V, ID = −0.2 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = −4 V, ID = −5.8 A IS = −1.7 A, VGS = 0 V −20 0.034 0.050 0.065 16 −0.8 −1.2 0.042 0.060 0.080 S V W −0.45 −1.0 "100 −1 −5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −4 V, RL = 4 W V, ID ^ −1.0 A, VGEN = −4.5 V, Rg = 6 W f = 1 MHz VDS = −4 V, VGS = −4.5 V, ID = −5.8 A 12.5 2.4 2.6 8 20 40 80 60 55 30 60 120 90 85 ns W 19 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 16 I D − Drain Current (A) I D − Drain Current (A) 16 20 TC = −55_C 25_C 125_C 12 Transfer Characteristics 12 2V 8 1.5 V 1V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 8 4 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) Document Number: 72859 S-40582—Rev. A, 29-Mar-04 www.vishay.com 2 Si3445ADV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.20 r DS(on) − On-Resistance ( W ) 2000 Vishay Siliconix Capacitance VGS = 1.8 V 0.12 C − Capacitance (pF) 0.16 1600 Ciss 1200 Coss 0.08 VGS = 2.5 V VGS = 4.5 V 800 Crss 400 0.04 0.00 0 4 8 12 16 20 0 0 1 2 3 4 5 6 7 8 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 4 V ID = 5.8 A 4 rDS(on) − On-Resiistance (Normalized) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 −50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.8 A 3 2 1 0 0 3 6 9 12 15 Qg − Total Gate Charge (nC) −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.20 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) 0.16 ID = 5.8 A 0.12 ID = 0.2 A 0.08 I S − Source Current (A) 10 TJ = 150_C TJ = 25_C 0.04 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72859 S-40582—Rev. A, 29-Mar-04 www.vishay.com 3 Si3445ADV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.3 Threshold Voltage 25 Single Pulse Power 0.2 VGS(th) Variance (V) ID = 250 mA 20 0.0 Power (W) 0.1 15 10 −0.1 5 −0.2 −50 −25 0 25 50 75 100 125 150 0 10−2 10−1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D − Drain Current (A) P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited 1 10 100 P(t) = 0.1 P(t) = 1 0.1 P(t) = 10 dc 0.01 0.1 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72859 S-40582—Rev. A, 29-Mar-04 Si3445ADV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72859 S-40582—Rev. A, 29-Mar-04 www.vishay.com 5