SI3445DV

Si3445DV Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) 0.042 @ VGS = −4.5 V 0.060 @ VGS = −2.5 V 0.080 @ VGS = −1.8 V ID (A) "5.6 "4.7 "2.9 TSOP-6 Top View (4) S 1 3 mm 6 5 2 (3) G 3 4 2.85 mm Ordering Information: Si3445DV-T1 Si3445DV-T1—E3 (Lead (Pb)-Free) (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage a, Continuous Drain Current Continuous Drain Current (TJ = 150_C)a, b Symbol VDS VGS TA = 25_C TA = 70_C ID IDM IS TA = 25_C TA = 70_C PD TJ, Tstg Limit −8 "8 "5.6 "4.5 "20 −1.7 2.0 1.3 −55 to 150 Unit V Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Notes a. Surface Mounted on FR4 Board. b. t v 5 sec. t v 5 sec Steady State Symbol RthJA Typical 106 Maximum 62.5 Unit _C/W Document Number: 70820 S-50129—Rev. B, 24-Jan-05 www.vishay.com 1 Si3445DV Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "8 V VDS = −8 V, VGS = 0 V VDS = −8 V, VGS = 0 V, TJ = 70_C VDS w −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −5.6 A Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −4.7 A VGS = −1.8 V, ID = −2.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = −10 V, ID = −5.6 A IS = −1.7 A, VGS = 0 V −15 0.034 0.048 0.062 15 0.7 −1.2 0.042 0.060 0.080 S V W −0.45 −1.0 "100 −1 −5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −4 V, RL = 4 W V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W VDS = −4 V, VGS = −4.5 V, ID = −5.6 A 15 3 2 20 50 110 60 60 40 100 220 120 100 ns 25 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70820 S-50129—Rev. B, 24-Jan-05 Si3445DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 2.5 V 16 I D − Drain Current (A) VGS = 5 thru 3 V 2V 1.8 V I D − Drain Current (A) 16 20 TC = −55_C 25_C Transfer Characteristics 12 12 125_C 8 8 4 1.5 V 4 0 0 1 2 3 1V 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 VGS = 1.8 V r DS(on) − On-Resistance ( W ) 0.16 C − Capacitance (pF) 2500 Capacitance 2000 Ciss 0.12 1500 0.08 VGS = 2.5 V VGS = 4.5 V 1000 Coss 500 Crss 0.04 0.00 0 4 8 12 16 20 0 0 2 4 6 8 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 5 V GS − Gate-to-Source Voltage (V) VDS = 4 V ID = 5.6 A Gate Charge 1.50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.6 A 4 rDS(on) − On-Resiistance (Normalized) 0 4 8 12 16 1.25 3 2 1.00 1 0 Qg − Total Gate Charge (nC) Document Number: 70820 S-50129—Rev. B, 24-Jan-05 0.75 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si3445DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.20 On-Resistance vs. Gate-to-Source Voltage r DS(on)− On-Resistance ( W ) 10 I S − Source Current (A) 0.16 TJ = 150_C 0.12 ID = 5.6 A 0.08 TJ = 25_C 0.04 1 0.00 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) 0.4 Threshold Voltage 25 20 Single Pulse Power VGS(th) Variance (V) 0.2 ID = 250 mA Power (W) 15 10 0.0 5 −0.2 −50 0 −25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 Single Pulse PDM t1 t2 1. Duty Cycle, D = 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 2. Per Unit Base = RthJA = 106_C/W t1 t2 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Dureation (sec) 10 100 600 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70820. www.vishay.com Document Number: 70820 S-50129—Rev. B, 24-Jan-05 4 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1