SI3447BDV-T1

Si3447BDV Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.040 @ VGS = −4.5 V −12 0.053 @ VGS = −2.5 V 0.072 @ VGS = −1.8 V FEATURES ID (A) −6.0 −5.2 −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance APPLICATIONS D Load Switch D PA Switch TSOP-6 Top View 1 3 mm 6 5 (3) G (4) S 2 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3447BDV-T1 Si3447BDV-T1—E3 (Lead Free) Marking Code: B7xxx P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −12 "8 Unit V −6.0 −4.3 −20 −1.7 2.0 1.0 −55 to 150 −4.5 −3.3 A −0.9 1.1 0.6 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72020 S-40424—Rev. B, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 62.5 110 36 Unit _C/W 1 Si3447BDV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "8 V VDS = −12 V, VGS = 0 V VDS = −12 V, VGS = 0 V, TJ = 85_C VDS = −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −6.0 A Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −5.2 A VGS = −1.8 V, ID = −2.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = −5 V, ID = −6.0 A IS = −1.7 A, VGS = 0 V −20 0.033 0.044 0.060 15 −0.7 −1.2 0.040 0.053 0.072 S V W −0.45 1 "100 −1 −5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −6 V, RL = 6 W V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W VDS = −6 V, VGS = −4.5 V, ID = −6.0 A 9.3 1.5 2.6 20 46 62 62 40 30 70 95 95 80 ns 14 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 16 2V I D − Drain Current (A) I D − Drain Current (A) 12 12 16 20 Transfer Characteristics TC = −55_C 25_C 125_C 8 1.5 V 8 4 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS − Gate-to-Source Voltage (V) Document Number: 72020 S-40424—Rev. B, 15-Mar-04 2 Si3447BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.20 r DS(on) − On-Resistance ( W ) 1600 1400 C − Capacitance (pF) 0.16 1200 1000 800 600 400 VGS = 4.5 V 0.00 0 4 8 12 16 20 200 0 0 2 4 6 8 10 12 Crss Coss Ciss Capacitance 0.12 0.08 VGS = 1.8 V VGS = 2.5 V 0.04 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 6 V ID = 6 A 4 rDS(on) − On-Resiistance (Normalized) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 −50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 6 A 3 2 1 0 0 2 4 6 8 10 Qg − Total Gate Charge (nC) −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 TJ = 150_C r DS(on) − On-Resistance ( W ) 0.16 I S − Source Current (A) 0.20 On-Resistance vs. Gate-to-Source Voltage ID = 6 A 0.12 ID = 2 A 0.08 10 TJ = 25_C 0.04 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72020 S-40424—Rev. B, 15-Mar-04 www.vishay.com 3 Si3447BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) 0.2 0.1 0.0 −0.1 −0.2 −50 10 ID = 100 mA Power (W) 30 50 Single Pulse Power 40 20 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D − Drain Current (A) P(t) = 0.001 1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72020 S-40424—Rev. B, 15-Mar-04 Si3447BDV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72020 S-40424—Rev. B, 15-Mar-04 www.vishay.com 5