SI3454ADV-T1-E3

Si3454ADV Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 4.5 3.8 rDS(on) (W) 0.060 @ VGS = 10 V 0.085 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View (1, 2, 5, 6) D 1 3 mm 6 5 2 3 4 (3) G 2.85 mm Ordering Information: Si3454ADV-T1 Si3454ADV-T1—E3 (Lead Free) Marking Code: A4xxx (4) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 30 "20 4.5 3.6 20 1.7 2.0 1.3 Steady State Unit V 3.4 2.7 A 1.0 1.14 0.73 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71108 S-40424—Rev. C, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 62.5 110 36 Unit _C/W 1 Si3454ADV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 4.5 A VGS = 4.5 V, ID = 3.8 A VDS = 10 V, ID = 4.5 A IS = 1.7 A, VGS = 0 V 15 0.048 0.070 10 0.8 1.2 0.060 0.085 1.0 3.0 "100 1 25 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.5 10 10 20 7 40 VDS = 15 V, VGS = 10 V, ID = 4.5 A 9 2.5 1.5 2.9 20 20 35 15 80 ns W 15 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 5 V 16 I D − Drain Current (A) I D − Drain Current (A) 4V 12 16 20 Transfer Characteristics TC = −55_C 25_C 125_C 12 8 8 4 3V 4 0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 71108 S-40424—Rev. C, 15-Mar-04 www.vishay.com 2 Si3454ADV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.20 r DS(on) − On-Resistance ( W ) 600 500 0.15 C − Capacitance (pF) 400 300 200 Coss 100 0.00 0 4 8 12 16 20 0 0 Crss 6 12 18 24 30 Ciss Capacitance 0.10 VGS = 4.5 V VGS = 10 V 0.05 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 4.5 A 8 rDS(on) − On-Resiistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 4.5 A 6 4 2 0 0 2 4 6 8 10 Qg − Total Gate Charge (nC) −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S − Source Current (A) 10 r DS(on) − On-Resistance ( W ) 0.15 0.20 On-Resistance vs. Gate-to-Source Voltage ID = 4.5 A 0.10 TJ = 25_C 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 71108 S-40424—Rev. C, 15-Mar-04 www.vishay.com 3 Si3454ADV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA −0.0 −0.2 −0.4 −0.6 −0.8 −50 10 Power (W) 30 50 Single Pulse Power 40 20 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = _C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71108 S-40424—Rev. C, 15-Mar-04