SI3455DV_05

Si3455DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −30 FEATURES ID (A) "3.5 "2.5 rDS(on) (W) 0.100 @ VGS = −10 V 0.190 @ VGS = −4.5 V D TrenchFETr Power MOSFET D Lead (Pb)-Free Version is RoHS Compliant Available (4) S TSOP-6 Top View 1 3 mm 6 5 (3) G 2 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm Ordering Information: Si3455DV-T1 Si3455DV-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg Symbol VDS VGS Limit −30 "20 "3.5 "2.7 "20 −1.7 2.0 1.3 −55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 5 sec. For SPICE model information via the Worldwide Web: http://www.Siliconix.com/www/product/spice.htm Document Number: 70194 S-50694—Rev. E, 18-Apr-05 www.vishay.com Symbol RthJA Limit 62.5 Unit _C/W 1 Si3455DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −30 V, VGS = 0 V VDS = −30 V, VGS = 0 V, TJ = 70_C VDS = −5 V, VGS = −10 V VGS = −10 V, ID = −3.5 A VGS = −4.5 V, ID = −2.5 A VDS = −15 V, ID = −3.5 A IS = −1.7 A, VGS = 0 V −15 0.080 0.134 4.0 −1.2 0.100 0.190 W S V −1.0 −3.0 "100 −1 −5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −10 V, RL = 10 W V, ID ^ −1 A, VGEN = −10 V, RG = 6 W VDS = −10 V, VGS = −10 V, ID = −3.5 A 5.1 1.5 1.0 10 15 20 10 50 20 30 35 20 80 ns 10 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 70194 S-50694—Rev. E, 18-Apr-05 Si3455DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10, 9, 8, 7 V 16 5V I D − Drain Current (A) 12 I D − Drain Current (A) 12 6V 16 20 TC = −55_C 25_C 125_C Transfer Characteristics 8 4V 8 4 3V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) 4 0 0 1 2 3 4 5 6 7 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.30 580 500 r DS(on)− On-Resistance ( W ) 0.24 VGS = 4.5 V 0.18 C − Capacitance (pF) 420 340 260 180 100 20 0 4 8 12 16 20 0 6 Crss Coss Capacitance Ciss 0.12 VGS = 10 V 0.06 0.00 ID − Drain Current (A) 12 18 24 30 VDS − Drain-to-Source Voltage (V) Gate Charge 10 VDS = 15 V ID = 3.5 A V GS − Gate-to-Source Voltage (V) 8 rDS(on) − On-Resiistance (Normalized) 1.60 1.45 1.30 1.15 1.00 0.85 0.70 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.5 A 6 4 2 0 0.0 1.5 3.0 4.5 6.0 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Document Number: 70194 S-50694—Rev. E, 18-Apr-05 www.vishay.com 3 Si3455DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.40 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) 10 r DS(on)− On-Resistance ( W ) 0.32 0.24 TJ = 150_C TJ = 25_C 0.16 ID = 3.5 A 0.08 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 VSD − Source-to-Drain Voltage (V) 0.00 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.60 0.45 ID = 250 mA VGS(th) Variance (V) 0.30 0.15 0.00 −0.15 −0.30 −50 6 Power (W) 18 30 Single Pulse Power 24 12 −25 0 25 50 75 100 125 150 0 0.01 0.10 1.00 Time (sec) 10.00 TJ − Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 4. Surface Mounted 1 10 30 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70194. www.vishay.com Document Number: 70194 S-50694—Rev. E, 18-Apr-05 4 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1