SI3456DV

Si3456DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.045 @ VGS = 10 V 0.065 @ VGS = 4.5 V ID (A) "5.1 "4.3 (1, 2, 5, 6) D TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (4) S N-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg Symbol VDS VGS Limit "30 "20 "5.1 "4.1 "20 "1.7 2 Unit V A W 1.3 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 5 sec. Document Number: 70659 S-56945—Rev. B, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 62.5 Unit _C/W 2-1 Si3456DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain Source On State Resistancea Drain-Source On-State Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 5.1 A VGS = 4.5 V, ID = 4.3 A VDS = 10 V, ID = 5.1 A IS = 1.7 A, VGS = 0 V 15 0.037 0.051 13 1.2 0.045 0.065 W S V 1.0 "100 1 5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgt Qgs Qgd td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W 15 V, 15 ID ^ 1 A, VGEN = 10 V RG = 6 W 10 V, 10 V, VDS = 15 V, VGS = 10 V ID = 5.1 A 15 V 1 VDS = 15 V, VGS = 5 V, ID = 5.1 A 5.7 12 2.8 1.6 10 10 25 10 60 20 20 50 20 80 ns 9 20 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70659 S-56945—Rev. B, 23-Nov-98 Si3456DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10, 9, 8, 7, 6, 5 V 16 I D – Drain Current (A) 4V 12 I D – Drain Current (A) 16 20 Transfer Characteristics 12 8 8 TC = 125_C 4 25_C –55_C 4 3V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.10 1000 Capacitance Ciss r DS(on)– On-Resistance ( W ) 0.08 C – Capacitance (pF) 800 0.06 VGS = 4.5 V VGS = 10 V 600 0.04 400 Coss 200 Crss 0.02 0 0 4 8 12 16 20 0 0 6 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 10 VDS = 15 V ID = 5.1 A V GS – Gate-to-Source Voltage (V) r DS(on)– On-Resistance ( W ) (Normalized) 8 1.60 On-Resistance vs. Junction Temperature 1.45 VGS = 10 V ID = 5.1 A 1.30 6 1.15 4 1.00 2 0.85 0 0 3 6 9 12 0.7 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70659 S-56945—Rev. B, 23-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-3 Si3456DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C 10 I S – Source Current (A) r DS(on)– On-Resistance ( W ) 0.08 0.10 On-Resistance vs. Gate-to-Source Voltage 0.06 0.04 ID = 5.1 A 0.02 TJ = 25_C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.6 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) –0.0 –0.2 –0.4 –0.6 5 –0.8 –1.0 –50 0 0.01 15 20 25 Single Pulse Power Power (W) 10 –25 0 25 50 75 100 125 150 0.10 Time (sec) 1.00 10.00 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70659 S-56945—Rev. B, 23-Nov-98