SI3460DV

Si3460DV Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A) 6.8 6.3 5.7 rDS(on) (W) 0.027 @ VGS = 4.5 V 0.032 @ VGS = 2.5 V 0.038 @ VGS = 1.8 V D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.85 mm (4) S Ordering Information: Si3460DV-T1 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 20 "8 6.8 5.4 20 1.7 2.0 1.3 Steady State Unit V 5.1 4.1 A 0.9 1.1 0.73 -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71329 S-31725—Rev. b, 18-Aug-03 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3460DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 4.5 V, ID = 5.1 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 4.7 A VGS = 1.8 V, ID = 2 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 5.1 A IS = 1.7 A, VGS = 0 V 20 0.023 0.027 0.032 25 0.8 1.2 0.027 0.032 0.038 S V W 0.45 "100 1 5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1.7 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W V, ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 0.5 15 30 70 30 40 VDS = 10 V, VGS = 4.5 V, ID = 5.1 A 13.5 2.3 2.2 2.9 30 60 140 60 80 ns W 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2 V 20 TC = - 55_C 16 I D - Drain Current (A) 25_C Transfer Characteristics 16 I D - Drain Current (A) 12 1.5 V 8 12 125_C 8 4 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 0 0.0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71329 S-31725—Rev. b, 18-Aug-03 2 Si3460DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.06 r DS(on) - On-Resistance ( W ) 0.05 0.04 0.03 0.02 0.01 0.00 0 4 8 12 16 20 VGS = 1.8 V VGS = 2.5 V C - Capacitance (pF) 2000 Capacitance 1600 Ciss 1200 800 VGS = 4.5 V 400 Crss Coss 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 5.1 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.1 A 1.4 3 r DS(on) - On-Resistance ( W) (Normalized) 6 9 12 15 1.2 2 1.0 1 0.8 0 0 3 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 On-Resistance vs. Gate-to-Source Voltage ID = 5.1 A TJ = 25_C 1 0.0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71329 S-31725—Rev. b, 18-Aug-03 www.vishay.com 3 Si3460DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 0.1 V GS(th) Variance (V) ID = 1 mA -0.0 -0.1 -0.2 -0.3 -0.4 -50 6 Power (W) 18 TA = 25_C 12 30 Single Pulse Power 24 0 -25 0 25 50 75 100 125 150 10 - 2 10 - 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71329 S-31725—Rev. b, 18-Aug-03