SI3483DV

Si3483DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET ID (A) −6.2 −5.0 rDS(on) (W) 0.035 @ VGS = −10 V 0.053 @ VGS = −4.5 V APPLICATIONS D Load Switch TSOP-6 Top View 1 3 mm 6 5 (4) S (3) G 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET Ordering Information: Si3483DV-T1—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −30 "20 Unit V −6.2 −4.9 −25 −1.7 2.0 1.3 −55 to 150 −4.7 −3.7 A −0.95 1.14 0.73 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72078 S-40238—Rev. B, 16-Feb-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3483DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −30 V, VGS = 0 V VDS = −30 V, VGS = 0 V, TJ = 85_C VDS v −5 V, VGS = −10 V VGS = −10 V, ID = −6.2 A VGS = −4.5 V, ID = −5.0 A VDS = −15 V, ID = −6.2 A IS = −1.7 A, VGS = 0 V −25 0.028 0.042 14 −0.8 −1.2 0.035 0.053 −1.0 −3 "100 −1 −5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = −1.7 A, di/dt = 100 A/ms VDD = −15 V, RL = 15 W V, ID ^ −1 A, VGEN = −10 V, Rg = 6 W VDS = −15 V, VGS = −10 V, ID = −6.2 A 23 3.6 6 10 10 71 45 45 15 15 110 70 70 ns 35 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 VGS = 10 thru 5 V 4V 25 Transfer Characteristics 20 I D − Drain Current (A) I D − Drain Current (A) 20 15 15 10 3V 5 10 5 TC = 125_C 25_C −55_C 2.5 3.0 3.5 4.0 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 0 0.0 0.5 1.0 1.5 2.0 VGS − Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72078 S-40238—Rev. B, 16-Feb-04 Si3483DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 r DS(on) − On-Resistance ( W ) 1600 1400 C − Capacitance (pF) 0.08 1200 1000 800 600 400 200 0.00 0 5 10 15 20 25 0 0 6 12 18 24 30 Crss Coss Ciss Capacitance 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 6.2 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 6.2 A 1.4 6 r DS(on) − On-Resistance (W ) (Normalized) 10 15 20 25 1.2 4 1.0 2 0.8 0 0 5 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage I S − Source Current (A) TJ = 150_C 10 r DS(on) − On-Resistance ( W ) 0.08 ID = 2 A 0.06 ID = 6.2 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72078 S-40238—Rev. B, 16-Feb-04 www.vishay.com 3 Si3483DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 50 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA Power (W) 0.2 40 30 0.0 20 −0.2 10 −0.4 −50 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D − Drain Current (A) P(t) = 0.0001 1 P(t) = 0.001 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72078 S-40238—Rev. B, 16-Feb-04 Si3483DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72078 S-40238—Rev. B, 16-Feb-04 www.vishay.com 5