SI3850ADV

Specification Comparison Vishay Siliconix Si3850ADV vs. Si3850DV Description: Package: Pin Out: Complementary MOSFET Half-Bridge (N- and P-Channel) TSOP-6 Identical Part Number Replacements Si3850ADV-T1-E3 Replaces Si3850DV-T1-E3 Si3850ADV-T1-E3 Replaces Si3850DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TA = 25 °C Continuous Drain Current TA = 70 °C Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25 °C TA = 70 °C IDM IS PD Tj and Tstg RthJA ID VDS VGS Symbol N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Si3850ADV 20 - 20 ± 12 ± 12 1.4 - 0.96 1.1 - 0.77 3.5 - 2.0 0.9 - 0.9 1.08 0.7 - 55 to 150 115 Si3580DV 20 - 20 ± 12 ± 12 1.2 - 0.85 0.95 - 0.65 3.5 - 2.5 1 -1 1.25 0.8 - 55 to 150 100 W °C °C/W A V Unit Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Document Number: 73853 Revision: 31-Oct-06 www.vishay.com 1 Specification Comparison Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current VGS = 4.5 V VGS = - 4.5 V VGS = 4.5 V VGS = - 4.5 V VGS = 3.0 V VGS = - 3.0 V VGS(th) IGSS IDSS ID(on) N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Ch 0.6 - 0.6 1.5 - 1.5 ± 100 ± 100 1 -1 0.6 - 0.6 1.5 - 1.5 ± 100 ± 100 1 -1 V nA µA A 0.38 0.7 0.55 1.1 2.7 1.2 0.500 1.0 0.750 1.3 Symbol Si3850ADV Min Typ Max Min Si3850DV Typ Max Unit 3.0 - 1.5 0.240 0.510 0.325 0.780 1.8 1.1 0.87 - 1.0 0.95 1.10 0.22 0.28 0.24 0.26 3.5 10.5 8 13 16 34 20 18 9 18 20 25 0.300 0.640 0.410 0.980 3.0 - 2.0 Drain-Source On-Resistance rDS(on) Ω Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Switchinga gfs VSD S 1.2 - 1.2 V 1.2 - 1.3 1.4 1.7 0.8 1.10 0.25 0.5 0.2 0.2 0.3 3 10 8 20 20 20 10 16 8 40 40 Qg Qgs Qgd Rg 2.0 2.5 nC 5.3 16 14 20 25 50 30 30 15 30 30 40 1.5 16 20 15 40 40 40 20 30 15 80 80 Ω td(on) Turn-On Time tr td(off) Turn-Off Time tf Source-Drain Reverse Recovery Time trr ns Specification comparisons are supplied as a courtesy to compare two devices and do not constitute a commercial product datasheet or any guarantee of identical performance. Designers should refer to the appropriate datasheets of the same number for guaranteed specification limits. www.vishay.com 2 Document Number: 73853 Revision: 31-Oct-06