SI3853DV

Si3853DV New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.200 @ VGS = –4.5 V 0.340 @ VGS = –2.5 V ID (A) "1.8 "1.3 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (v) Diode Forward Voltage 0.48 V @ 0.5 A IF (A) 0.5 S K TSOP-6 Top View A 1 6 K G 3 mm S 2 5 N/C G 3 4 D 2.85 mm D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a Drain Current C) MOSFET) Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Power Dissipation (MOSFET) Maximum Power Dissipation (Schottky)a Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Notes a. Surface Mounted on 1” x1” FR4 Board. Document Number: 70979 S-61846—Rev. A, 04-Oct-99 www.vishay.com S FaxBack 408-970-5600 TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM 5 sec –20 20 "12 "1.8 "1.5 "7 –1.05 0.5 7 1.15 0.73 1.0 0.64 Steady State Unit V "12 "1.6 "1.2 A –0.75 0.83 0.53 0.76 0.48 –55 to 150 _C W 2-1 Si3853DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t v 5 sec sec Junction-to-Ambient Junction-to-Ambienta i Steady State Steady State Schottky MOSFET Junction-to-Foot Junction-to-Foot Steady State Steady State Schottky Notes a. Surface Mounted on 1” x 1” FR4 Board. RthJF 140 75 80 165 90 95 New Product Device MOSFET Schottky MOSFET Symbol Typical 93 103 Maximum 110 125 150 Unit RthJA 130 _C/W MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current On-State Drain Currenta Drain Source On State Resistancea Drain-Source On-State Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = –16 V, VGS = 0 V VDS = –16 V, VGS = 0 V, TJ = 75_C VDS w –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –1.8 A VGS = –2.5 V, ID = –1.0 A VDS = –5 V, ID = –1.8 A IS = –1.05 A, VGS = 0 V –5 0.160 0.280 3.6 –0.83 –1.10 0.200 0.340 W S V –0.5 "100 –1 –10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = –1.05 A, di/dt = 100 A/ms V, 10 VDD = –10 V, RL = 10 W ID ^ –1 A, VGEN = –4 5 V RG = 6 W A 4.5 V, VDS = –10 V VGS = –4.5 V, ID = –1.8 A V, 45V 18 2.7 0.4 0.6 11 34 19 24 20 17 50 30 36 40 ns 4.0 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Voltage Drop Symbol VF Test Condition IF = 0.5 A IF = 0.5 A, TJ = 125_C Vr = 20 V Vr = 20 V, TJ = 75_C Vr = 20 V, TJ = 125_C Vr = 10 V Min Typ 0.42 0.33 0.002 0.06 1.5 31 Max 0.48 0.4 0.100 1 10 Unit V Maximum R Mi Reverse Leakage Current Lk C Irm CT mA A Junction Capacitance www.vishay.com S FaxBack 408-970-5600 pF 2-2 Document Number: 70979 S-61846—Rev. A, 04-Oct-99 Si3853DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 4.5 thru 4 V 8 6 I D – Drain Current (A) 3V 6 I D – Drain Current (A) 25_C 125_C 4 3.5 V 8 TC = –55_C Vishay Siliconix MOSFET Transfer Characteristics 4 2.5 V 2 2V 1.5 V 2 0 0 1 2 3 4 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 450 Capacitance r DS(on) – On-Resistance ( W ) 0.5 C – Capacitance (pF) VGS = 2.5 V 0.4 360 Ciss 270 0.3 VGS = 3.6 V 180 Coss 90 Crss 0 4 8 12 16 20 0.2 VGS = 4.5 V 0.1 0 0 1 2 3 4 5 6 7 0 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 4.5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 1.8 A 1.8 1.6 r DS(on) – On-Resistance (W) (Normalized) 1.4 1.2 1.0 0.8 0.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.8 A 3.6 2.7 1.8 0.9 0 0 0.6 1.2 1.8 2.4 3.0 0.4 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70979 S-61846—Rev. A, 04-Oct-99 www.vishay.com S FaxBack 408-970-5600 2-3 Si3853DV Vishay Siliconix New Product MOSFET On-Resistance vs. Gate-to-Source Voltage 0.6 ID = 1.8 A 0.5 r DS(on)– On-Resistance ( W ) I S – Source Current (A) ID = 1.2 A 0.4 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 TJ = 150_C 1 0.3 TJ = 25_C 0.2 0.1 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 1 2 3 4 5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.6 ID = 250 mA 0.4 V GS(th) Variance (V) 6 8 Single Pulse Power, Junction-to-Ambient 0.2 Power (W) 4 0.0 2 –0.2 –0.4 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70979 S-61846—Rev. A, 04-Oct-99 Si3853DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Duty Cycle = 0.5 Vishay Siliconix MOSFET Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 10 I R – Reverse Current (mA) 5 SCHOTTKY Forward Voltage Drop I F – Forward Current (A) 1 TJ = 150_C 1 0.1 20 V 0.01 10 V TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) 0.1 0 0.2 0.4 0.6 0.8 1.0 VF – Forward Voltage Drop (V) 150 Capacitance CT – Junction Capacitance (pF) 120 90 60 30 0 0 4 8 12 16 20 VKA – Reverse Voltage (V Document Number: 70979 S-61846—Rev. A, 04-Oct-99 www.vishay.com S FaxBack 408-970-5600 2-5 Si3853DV Vishay Siliconix New Product SCHOTTKY TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 140_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-6 Document Number: 70979 S-61846—Rev. A, 04-Oct-99