SI3863BDV

Specification Comparison Vishay Siliconix Si3863BDV vs. Si3863DV Description: Package: Pin Out: Load Switch with Level-Shift TSOP-6 Identical Part Number Replacements: Si3863BDV-T1-E3 Replaces Si3863DV-T1-E3 Si3863BDV-T1-E3 Replaces Si3863DV-T1 Summary of Performance: The Si3863BDV is an upgrade to the original Si3863DV; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Si3863BDV Si3863DV Unit Input Voltage ON/OFF Voltage Load Current Continuous Intrinsic Diode Conduction Power Dissipation Operating Junction & Storage Temperature Range Maximum Junction-to-Ambient Continuous Pulsed VIN VON/OFF IL IS PD Tj & Tstg RthJA 12 8 +2.5 +5 -1 0.83 -55 to 150 150 12 8 +2.5 +5 -1 0.83 -55 to 150 150 W °C °C/W V A SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter OFF Characteristic Reverse Leakage Current Diode Forward Voltage Symbol IFL VSD VIN VIN = 4.5 V VIN = 3.0 V VIN = 2.5 V rDS(on) Min Si3863BDV Typ Max 1 Min Si3863DV Typ Max 1 -0.75 -1 12 0.105 0.125 0.165 Unit uA V nC Ω Ω Ω A A -0.75 2.5 0.057 0.082 0.110 1 -1 12 0.075 0.105 0.140 1 1 2.5 Dynamic Input Voltage Range On-Resistance (p-channel) @ 1A 0.086 0.105 0.135 On-State (p-channel) Drain-Current VIN = 10 V VIN = 5 V ID(on) 1 Document Number 74118 27-May-05 www.vishay.com