SI3863DV

Si3863DV New Product Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 (V) rDS(on) (W) 0.105 @ VIN = 4.5 V 2.5 2 5 to 12 0.125 @ VIN = 3.0 V 0.165 @ VIN = 2.5 V ID (A) "2.5 "2.1 "1.8 2.5 V Rated D Low Profile, Small Footprint TSOP-6 Package D 3000-V ESD Protection On Input Switch, VON/OFF D Adjustable Slew-Rate FEATURES D 105-mW Low rDS(on) TrenchFETt D 2.5 to 12-V Input D 1.5 to 8-V Logic Level Control DESCRIPTION The Si3863DV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFETR is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3863DV operates on supply lines from 2.5 to 12-V, and can drive loads up to 2.5 A. APPLICATION CIRCUITS Si3863DV Switching Variation R2 @ VIN = 3 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 25 2, 3 VOUT 20 4 VIN Q2 R1 6 tf C1 Time ( mS) 6 15 td(off) 10 tr 5 td(on) 5 ON/OFF Q1 Co LOAD Ci 1 R2 R2 GND 0 0 2 4 R2 (kW) Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics 6 8 COMPONENTS R1 R2 C1 Pull-Up Resistor Optional Slew-Rate Control Optional Slew-Rate Control Typical 10 kW to 1 mW* Typical 0 to 100 kW* Typical 1000 pF The Si3863DV is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. Document Number: 70866 S-60514—Rev. A, 5-Apr-99 www.vishay.com S FaxBack 408-970-5600 2-1 Si3863DV Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM Si3863DV TSOP-6 Top View S2 Q2 R2 1 6 R1, C1 6 R1, C1 D2 2 5 ON/OFF 5 ON/OFF Q1 4 2, 3 D2 New Product D2 3 4 S2 1 R2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Input Voltage ON/OFF Voltage Load Current Current Continuous Intrinsic Diode Conductiona Maximum Power Dissipationa Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 W) Continuousa, b Pulsedb, c Symbol VIN VON/OFF IL IS PD TJ, Tstg ESD Limit 12 8 "2.5 "5 –1 0.83 –55 to 150 3 Unit V A W _C kV THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (continuous current)a Maximum Junction-to-Foot (Q2) Symbol RthJA RthJC Typical 120 35 Maximum 150 50 Unit _C/W SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter OFF Characteristics Reverse Leakage Current Diode Forward Voltage IFL VSD VIN = 12 V, VON/OFF = 0 V IS = –1 A –0.75 1 –1 mA V Symbol Test Condition Min Typ Max Unit ON Characteristics Input Voltage Range VIN VIN = 4.5 V On-Resistance (p-channel) @ 1 A ORi (h l) rDS(on) VON/OFF = 1.5 V 5 ID = 1 A VIN = 3.0 V VIN = 2.5 V On-State (p-channel) Drain-Current (p Drain ID(on) VIN-OUT v 0.2 V, VIN = 5 V, VON/OFF = 1.5 V VIN-OUT v 0.3 V, VIN = 3 V, VON/OFF = 1.5 V 1 1 2.5 0.086 0.105 0.135 12 0.105 0.125 0.165 A W V Notes a. Surface Mounted on FR4 Board. b. VIN = 12 V, VON/OFF = 8 V, TA = 25_C. c. Pulse test: pulse width v300 ms, duty cycle v2%. www.vishay.com S FaxBack 408-970-5600 Document Number: 70866 S-60514—Rev. A, 5-Apr-99 2-2 Si3863DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) VDROP vs. IL @ VIN = 4.5 V 0.6 VON/OFF = 1.5 to 8 V 0.6 0.5 0.4 TJ = 125_C 0.3 0.2 0.1 0 0 1 2 IL – (A) 3 4 5 0 1 2 IL – (A) 3 4 5 TJ = 25_C Vishay Siliconix VDROP vs. IL @ VIN = 3 V VON/OFF = 1.5 to 8 V 0.5 0.4 V DROP (V) TJ = 125_C 0.3 TJ = 25_C 0.2 V DROP (V) 0.1 0 VDROP vs. IL @ VIN = 2.5 V 0.6 0.40 VDROP vs. VIN @ IL = 1 A IL = 1 A VON/OFF = 1.5 to 8 V 0.5 TJ = 125_C V DROP (V) V DROP (V) 0.4 TJ = 25_C 0.3 0.32 0.24 0.16 0.2 VON/OFF = 1.5 to 8 V 0.1 0 0 1 2 IL – (A) 3 4 5 0 2 4 0.08 TJ = 25_C TJ = 125_C 0 6 8 VIN (V) VDROP Variance vs. Junction Temperature 0.06 IL = 1 A VON/OFF = 1.5 to 8 V 0.04 V DROP Variance (V) VIN = 4.5 V 0.02 VIN = 2.5 V 0.00 r SS(on) – On-Resistance ( W ) 0.32 0.40 On-Resistance vs. Input Voltage IL = 1 A VON/OFF = 1.5 to 8 V 0.24 0.16 TJ = 125_C –0.02 0.08 TJ = 25_C 0 –0.04 –50 –25 0 25 50 75 100 125 150 0 2 4 VIN (V) 6 8 TJ – Junction Temperature (_C) Document Number: 70866 S-60514—Rev. A, 5-Apr-99 www.vishay.com S FaxBack 408-970-5600 2-3 Si3863DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized On-Resistance vs. Junction Temperature 1.6 IL = 1 A VON/OFF = 1.5 to 8 V r DS(on) – On-Resistance (W ) (Normalized) 1.4 VIN = 4.5 V 32 td(off) VIN = 2.5 V Time ( mS) 1.2 24 tf 40 Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF 1.0 16 0.8 8 tr td(on) 0 2 4 R2 (kW) 6 8 0.6 –50 0 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) 25 Switching Variation R2 @ VIN = 3 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF Time ( mS) td(off) 30 Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tf 20 tf Time ( mS) 15 24 18 10 12 tr td(off) td(on) 5 tr td(on) 6 0 0 2 4 R2 (kW) 6 8 0 0 2 4 R2 (kW) 6 8 500 Switching Variation R2 @ VIN = 4.5 V, R1 = 300 kW 250 Switching Variation R2 @ VIN = 3 V, R1 = 300 kW tf 400 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF td(off) 200 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF td(off) Time ( mS) 300 Time ( mS) 150 tf 200 100 100 tr td(on) 0 20 40 R2 (kW) 60 80 50 tr td(on) 0 0 0 20 40 R2 (kW) 60 80 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70866 S-60514—Rev. A, 5-Apr-99 Si3863DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Variation R2 @ VIN = 2.5 V, R1 = 300 kW tf 200 td(off) Time ( mS) 150 IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF Vishay Siliconix 250 100 tr 50 td(on) 0 0 20 40 R2 (kW) 60 80 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 150_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Dureation (sec) Document Number: 70866 S-60514—Rev. A, 5-Apr-99 www.vishay.com S FaxBack 408-970-5600 2-5