SI3867DV

Si3867DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.051 @ VGS = - 4.5 V - 20 0.067 @ VGS = - 3.3 V 0.100 @ VGS = - 2.5 V FEATURES ID (A) - 5.1 - 4.5 - 3.7 D TrenchFETr Power MOSFET D PWM Optimized APPLICATIONS D DC/DC - HDD - Power Supplies D Portable Devices Such As Cell Phones, PDA, DSC, and DVC (4) S TSOP-6 Top View 1 3 mm 6 5 (3) G 2 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm Ordering Information: Si3867DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State - 20 "12 Unit V - 5.1 - 3.7 - 20 - 1.7 2.0 1.0 - 55 to 150 - 3.9 - 2.8 A - 0.9 1.1 0.6 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72068 S-31988—Rev. B, 13-Oct-03 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3867DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "12 V VDS = - 16 V, VGS = 0 V VDS = - 16 V, VGS = 0 V, TJ = 85_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 5.1 A Drain-Source On-State Resistancea rDS(on) VGS = - 3.3 V, ID = - 4.5 A VGS = - 2.5 V, ID = - 2 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 5 V, ID = - 5.1 A IS = - 1.7 A, VGS = 0 V - 20 0.041 0.054 0.081 11 - 0.7 - 1.2 0.051 0.067 0.100 S V W - 0.6 - 1.4 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.7 A, di/dt = 100 A/ms VDD = - 10 V, RL = 10 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 10 V, VGS = - 4.5 V, ID = - 5.1A 7 2.3 1.6 17 31 32 30 25 30 50 50 50 50 ns 11 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 3.5 V 3V I D - Drain Current (A) 20 Transfer Characteristics TC = - 55_C 16 25_C 16 I D - Drain Current (A) 125_C 12 2.5 V 12 8 8 4 2V 1.5 V 0 1 2 3 4 5 4 0 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Document Number: 72068 S-31988—Rev. B, 13-Oct-03 2 Si3867DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.20 r DS(on) - On-Resistance ( W ) 1200 1000 C - Capacitance (pF) VGS = 2.5 V 0.12 800 600 400 Coss 200 0 0 4 8 12 16 20 0 4 8 12 16 20 Crss Ciss Capacitance 0.16 0.08 VGS = 3.3 V VGS = 4.5 V 0.04 0.00 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 5.1 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.1 A 1.4 3 r DS(on) - On-Resistance (W ) (Normalized) 4 6 8 1.2 2 1.0 1 0.8 0 0 2 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 TJ = 150_C 0.20 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.16 ID = 2 A 0.12 ID = 5.1 A 0.08 0.04 TJ = 25_C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72068 S-31988—Rev. B, 13-Oct-03 www.vishay.com 3 Si3867DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 0.1 0.0 - 0.1 - 0.2 - 50 Power (W) 20 TA = 25_C 10 30 Single Pulse Power 25 5 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited P(t) = 0.0001 10 I D - Drain Current (A) P(t) = 0.001 1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 dc Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72068 S-31988—Rev. B, 13-Oct-03 Si3867DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72068 S-31988—Rev. B, 13-Oct-03 www.vishay.com 5