SI3973DV

Si3973DV New Product Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.087 @ VGS = −4.5 V −12 0.120 @ VGS = −2.5 V 0.165 @ VGS = −1.8 V FEATURES ID (A) −2.7 −2.3 −1.5 D TrenchFETr Power MOSFET APPLICATIONS D Portable − PA Switch − Load Switch TSOP-6 Top View G1 3 mm 1 6 5 D1 G1 S1 S2 S2 2 S1 G2 G2 3 4 D2 2.85 mm D1 Ordering Information: Si3973DV-T1—E3 Marking Code: MBxxx P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −12 "8 Unit V −2.7 −2.2 −7 −1.05 1.15 0.73 −55 to 150 −2.4 −1.9 A −0.75 0.83 0.53 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72337 S-40575—Rev. D, 29-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 93 130 75 Maximum 110 150 90 Unit _C/W 1 Si3973DV New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "8 V VDS = −12 V, VGS = 0 V VDS = −12 V, VGS = 0 V, TJ = 55_C VDS p −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −2.7 A Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −2.3 A VGS = −1.8 V, ID = −1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = −4.5 V, ID = −2.7 A IS = −1.05 A, VGS = 0 V −5 0.070 0.096 0.130 7 −0.75 −1.1 0.087 0.120 0.165 S V W −0.40 −0.9 "100 −1 −5 V nA mA A Vishay Siliconix Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −1.05 A, di/dt = 100 A/ms VDD = −6 V, RL = 6 W V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W VDS = −6 V, VGS = −4.5 V, ID = −2.7 A 5.5 0.8 1.6 7.6 30 60 55 45 27 45 90 85 70 45 ns W 8.5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 7 6 5 4 3 2 1 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com VGS = 5 thru 2 V 7 6 5 4 3 2 1 0 0.0 Transfer Characteristics I D − Drain Current (A) 1.5 V I D − Drain Current (A) TC = 125_C 25_C −55_C 0.5 1.0 1.5 2.0 2.5 VGS − Gate-to-Source Voltage (V) Document Number: 72337 S-40575—Rev. D, 29-Mar-04 2 Si3973DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 VGS = 4.5 V 5 6 7 C − Capacitance (pF) Vishay Siliconix On-Resistance vs. Drain Current 800 Capacitance r DS(on) − On-Resistance ( W ) 640 Ciss 480 320 Coss 160 Crss 0 0 3 6 9 12 VGS = 1.8 V VGS = 2.5 V ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) 6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 1 2 VDS = 6 V ID = 2.7 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.7 A 1.4 rDS(on) − On-Resiistance (Normalized) 3 4 5 6 7 1.2 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.5 On-Resistance vs. Gate-to-Source Voltage r DS(on)− On-Resistance ( W ) 0.4 ID = 2.7 A 0.3 I S − Source Current (A) 1 TJ = 150_C 0.2 ID = 1 A 0.1 TJ = 25_C 0.1 0.00 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) Document Number: 72337 S-40575—Rev. D, 29-Mar-04 0.0 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si3973DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.3 ID = 250 mA 0.2 V GS(th) Variance (V) 6 Power (W) 8 Vishay Siliconix Single Pulse Power, Junction-to-Ambient 0.1 4 0.0 2 −0.1 −0.2 −50 0 −25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ − Temperature (_C) 10 Safe Operating Area, Junction-to-Case Limited by rDS(on) 1 ms I D − Drain Current (A) 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) 1s 10 s dc 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 72337 S-40575—Rev. D, 29-Mar-04 4 Si3973DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72337 S-40575—Rev. D, 29-Mar-04 www.vishay.com 5