SI3983DV

Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.110 @ VGS = −4.5 V −20 0.145 @ VGS = −2.5 V 0.220 @ VGS = −1.8 V FEATURES ID (A) −2.5 −2.0 −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel APPLICATIONS D Battery Switch For Portable Devices D Computers − Bus Switch − Load Switch S1 S2 TSOP-6 Top View G1 3 mm 6 5 D1 G1 1 2 S2 S1 G2 G2 3 4 D2 2.85 mm Ordering Information: Si3983DV-T1—E3 Marking Code: MDxxx D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State −20 "8 Unit V −2.5 −2.0 −8 −1.05 1.15 0.73 −55 to 150 −2.1 −1.7 A −0.75 0.83 0.53 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72316 S-40575—Rev. C, 29-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 93 130 90 Maximum 110 150 90 Unit _C/W 1 Si3983DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "8 V VDS = −20 V, VGS = 0 V VDS = −20 V, VGS = 0 V, TJ = 85_C VDS = −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −2.5 A Drain-Source On-State Resistancea rDS(on) VGS = −2.5 V, ID = −2.0 A VGS = −1.8 V, ID = −1.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = −5 V, ID = −2.5 A IS = −1.05 A, VGS = 0 V −5 0.086 0.116 0.170 6 −0.8 −1.1 0.110 0.145 0.220 S V W −0.40 −1.1 "100 −1 −10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = −1.05 A, di/dt = 100 A/ms VDD = −10 V, RL = 10 W 10 V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W VDS = −10 V, VGS = −4.5 V, ID = −2.5 A 5 0.68 1.30 28 55 55 32 25 45 85 85 50 40 ns 7.5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 7 6 I D − Drain Current (A) 5 4 3 2 1 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 1.5 V VGS = 5 thru 2.5 V 2V 8 7 6 I D − Drain Current (A) 5 4 3 2 1 0 0.0 Transfer Characteristics TC = −55_C 25_C 125_C 0.5 1.0 1.5 2.0 2.5 VGS − Gate-to-Source Voltage (V) Document Number: 72316 S-40575—Rev. C, 29-Mar-04 2 Si3983DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.75 650 Vishay Siliconix Capacitance r DS(on)− On-Resistance ( W ) 0.60 C − Capacitance (pF) 520 Ciss 0.45 390 0.30 VGS = 1.8 V 0.15 VGS = 2.5 V 260 Coss Crss 130 0.00 0 1 2 3 4 5 ID − Drain Current (A) VGS = 4.5 V 6 7 8 0 0 4 8 12 16 20 VDS − Drain-to-Source Voltage (V) 6.5 VDS = 10 V ID = 2.5 A Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.5 A V GS − Gate-to-Source Voltage (V) 5.2 1.4 rDS(on) − On-Resiistance (Normalized) 3.9 1.2 2.6 1.0 1.3 0.8 0.0 0 1 2 3 4 5 6 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.5 On-Resistance vs. Gate-to-Source Voltage r DS(on)− On-Resistance ( W ) 0.4 I S − Source Current (A) 1 TJ = 150_C 0.3 ID = 2.5 A 0.2 TJ = 25_C 0.1 0.1 0.00 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) Document Number: 72316 S-40575—Rev. C, 29-Mar-04 0.0 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si3983DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 6 V GS(th) Variance (V) 0.2 ID = 250 mA 0.1 0.0 2 −0.1 −0.2 −50 Power (W) 4 8 Single Pulse Power (Junction-to-Ambient) −25 0 25 50 75 100 125 150 0 0.01 0.1 Time (sec) 1 10 30 TJ − Temperature (_C) 10 Safe Operating Area, Junction-to-Case Limited by rDS(on) I D − Drain Current (A) 1 ms 1 10 ms 100 ms TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) 1s 10 s dc 0.1 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72316 S-40575—Rev. C, 29-Mar-04 www.vishay.com 4 Si3983DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72316 S-40575—Rev. C, 29-Mar-04 www.vishay.com 5