SI426DQ

Si6426DQ N-Channel 2.5-V (G-S) Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) 0.035 @ VGS = 4.5 V 0.04 @ VGS = 2.5 V ID (A) "5.4 "4.9 D TSSOP-8 D S S G 1 2 3 4 D Si6426DQ 8 7 6 5 D S S D G Top View S* N-Channel MOSFET *Source Pins 2, 3, 6, and 7 must be tied common. Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Drain Current (T 150 Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 "8 "5.4 "4.2 "30 1.25 1.5 1.0 –55 to 150 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70174. A SPICE Model data sheet is available for this product (FaxBack document #70545). Symbol RthJA Limit 83 Unit _C/W Siliconix S-49534—Rev. A, 06-Oct-97 1 Si6426DQ Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 4.5 V VDS w 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 5.4 A rDS(on) gfs VSD VGS = 2.5 V, ID = 4.9 A VDS = 10 V, ID = 5.4 A IS = 1.25 A, VGS = 0 V "20 "8 0.025 0.030 22 0.7 1.2 0.035 0.04 0.6 "100 1 5 V nA mA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta Drain Current ID( ) D(on) A Drain-Source On State Resistance Drain Source On-State Resistancea Forward Transconductance a Diode Forward Voltagea W S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.25 A, di/dt = 100 A/ms VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 6 V, VGS = 4.5 V, ID = 5.4 A 18 2.5 4 35 65 100 33 50 60 100 150 60 100 ns 35 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. 2 Siliconix S-49534—Rev. A, 06-Oct-97 Si6426DQ Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics 40 VGS = 5 thru 3 V 2.5 V 32 I D – Drain Current (A) I D – Drain Current (A) 20 25 Transfer Characteristics 24 2V 16 15 10 25_C –55_C 8 1.5 V 0 0 1 2 3 4 5 1, 0.5 V 5 TC = 125_C 0 0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 2800 2400 rDS(on) – On-Resistance ( W ) 0.04 C – Capacitance (pF) VGS = 2.5 V 0.03 VGS = 4.5 V 2000 1600 Capacitance Coss 1200 800 400 Crss Ciss 0.02 0.01 0 0 6 12 18 24 30 36 ID – Drain Current (A) 0 0 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) 8 VGS – Gate-to-Source Voltage (V) VDS = 6 V ID = 5.4 A 6 Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 5.4 A rDS(on) – On-Resistance ( W ) (Normalized) 0 6 12 18 24 30 1.5 4 1.0 2 0.5 0 0 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Siliconix S-49534—Rev. A, 06-Oct-97 3 Si6426DQ Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode Forward Voltage 40 0.30 On-Resistance vs. Gate-to-Source Voltage I S – Source Current (A) TJ = 150_C 10 rDS(on) – On-Resistance ( W ) 0.24 0.18 0.12 ID = 5.4 A 0.06 TJ = 25_C 1 0.5 0.7 0.9 1.1 1.3 VSD – Source-to-Drain Voltage (V) 0 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) 0.2 0.1 VGS(th) Variance (V) –0.0 –0.1 –0.2 –0.3 –0.4 –50 Threshold Voltage 50 Single Pulse Power 40 ID = 250 mA Power (W) –25 0 25 50 75 100 125 150 30 20 10 0 0.001 0.01 0.1 Time (sec) 1 10 100 TJ – Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Normalized Thermal Transient Impedance, Junction-to-Ambient Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 83_C/W 3. TJM – TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 4. Surface Mounted 10 30 Square Wave Pulse Duration (sec) 4 Siliconix S-49534—Rev. A, 06-Oct-97