SI4340DDY

Si4340DDY Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 Channel-2 20 20 RDS(on) () 0.0085 at VGS = 10 V 0.0115 at VGS = 4.5 V 0.0070 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.8 12.8 22 18.9 Qg (Typ.) 8.1 8.4 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY VDS (V) 20 VSD (V) Diode Forward Voltage 0.55 V at 2.5 A SO-14 D1 D1 G1 G2 S2 S2 S2 1 2 3 4 5 6 7 Top View 14 13 12 11 10 9 8 S1 S1 D2 D2 D2 D2 D2 APPLICATIONS IF (A) 2 • DC/DC Converters, Synchronous Buck Converters - Game Stations - Notebook PC Logic D1 D2 Schottky Diode G1 G2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET Ordering Information: Si4340DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Source-Drain Current Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS 3 1.9 2b, c 1.3b, c - 55 to 150 ID Symbol VDS VGS 14.8 11.8 12.1b, c 9.7 50 b, c Channel-1 20 ± 20 Channel-2 Unit V 22 17.6 16.3b, c 13b, c 60 4.5 2.5b, c 15 11.25 5.4 3.5 3b, c 1.9b, c °C W mJ A 2.5 1.7b, c THERMAL RESISTANCE RATINGS Parameter Symbol Channel-1 Typ. Max. 53 62.5 42 Channel-2 Typ. Max. 35 42 18 23 Unit °C/W t  10 s RthJA Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) Steady State RthJF 35 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions for channel 1 is 110 °C/W and channel 2 is 87 °C/W. Document Number: 67583 S11-0860-Rev. A, 02-Mar-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4340DDY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Source Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = 250 µA ID = 250 µA ID = 25 mA ID = 250 µA ID = 25 mA VDS = VGS, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 0 V, VGS = ± 20 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS = 20 V, VGS = 0 V, TJ = 85 °C On-State Drain Currentb ID(on) VDS 5 V, VGS = 10 V VDS 5 V, VGS = 10 V VGS = 10 V, ID = 11.5 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 15.2 A VGS = 4.5 V, ID = 10 A VGS = 4.5 V, ID = 14 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 12 A Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 12 A Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 12 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 12 A f = 1 MHz Ch-1 Channel-1 VDS = 10 V, VGS = 0 V, f = 1 MHz Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 862 956 280 363 116 120 17.4 17.8 8.1 8.4 2.2 2.6 2.4 2.5 2.2 2.6 4.4 5.2  26 27 12.5 12.5 nC pF gfs VDS = 10 V, ID = 11.5 A VDS = 10 V, ID = 15.2 A Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 30 0.0065 0.0085 0.0060 0.0070 0.0091 0.0115 0.0077 0.0095 28 44 S  1 1 20 20 20 22 - 4.4 - 4.6 2.5 2.5 100 100 1 100 15 10 000 A µA V nA mV/°C V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 Document Number: 67583 S11-0860-Rev. A, 02-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4340DDY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb Channel-1 IF = 9.2 A, dI/dt = 100 A/µs, TJ = 25 °C Channel-2 IF = 2.5 A, dI/dt = 100 A/µs, TJ = 25 °C IS = 5 A IS = 2.5 A TC = 25 °C Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.76 0.43 18 18 7 7 8 10 9 9 ns 2.5 4.5 50 60 1.2 0.55 36 36 14 14 V ns nC A td(on) tr td(off) tf td(on) tr td(off) tf Ch-1 Channel-1 VDD = 10 V, RL = 1  ID  10 A, VGEN = 4.5 V, Rg = 1  Channel-2 VDD = 10 V, RL = 1  ID  10 A, VGEN = 4.5 V, Rg = 1  Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Channel-1 VDD = 10 V, RL = 1  ID  10 A, VGEN = 10 V, Rg = 1  Channel-2 VDD = 10 V, RL = 1  ID  10 A, VGEN = 10 V, Rg = 1  Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 18 20 37 34 19 21 10 10 9 9 13 13 16 15 8 8 35 40 70 65 35 40 20 20 18 18 26 26 32 30 16 16 ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 67583 S11-0860-Rev. A, 02-Mar-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4340DDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 VGS = 10 V thru 4 V 40 ID - Drain Current (A) ID - Drain Current (A) 8 10 30 VGS = 3 V 20 6 4 TC = 25 °C 10 VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) 2 T = 125 °C C 0 0.0 0.8 1.6 2.4 3.2 4.0 VGS - Gate-to-Source Voltage (V) TC = - 55 °C Output Characteristics 0.014 1200 Transfer Characteristics 0.012 RDS(on) - On-Resistance (Ω) C - Capacitance (pF) 960 Ciss 0.010 VGS = 4.5 V 720 0.008 480 Coss 240 Crss 0.006 VGS = 10 V 0.004 0 10 20 30 40 50 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 10 ID = 12 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 5 V 4 VDS = 15 V RDS(on) - On-Resistance (Normalized) 1.4 1.6 ID = 11.5 A Capacitance VGS = 10 V 1.2 VGS = 4.5 V 1.0 2 0.8 0 0 4 8 12 16 20 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 67583 S11-0860-Rev. A, 02-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4340DDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.030 ID = 11.5 A RDS(on) - On-Resistance (Ω) 10 IS - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 0.024 0.018 0.1 0.012 TJ = 25 °C TJ = 125 °C 0.01 0.006 0.001 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 50 On-Resistance vs. Gate-to-Source Voltage 0.2 VGS(th) - Variance (V) 40 0 ID = 5 mA - 0.2 Power (W) 150 30 20 - 0.4 ID = 250 μA 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) 0 0.001 0.01 0.1 Time (s) 1 10 Threshold Voltage 100 IDM Limited 10 ID - Drain Current (A) ID Limited 100 μs 1 ms 1 Limited by RDS(on)* 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 ms 100 ms 1s 10 s DC BVDSS Limited 10 100 Single Pulse Power VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67583 S11-0860-Rev. A, 02-Mar-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4340DDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 12 ID - Drain Current (A) 9 6 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 3.5 1.5 2.8 1.2 Power (W) 1.4 Power (W) 0 25 50 75 100 125 150 2.1 0.9 0.6 0.7 0.3 0.0 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 67583 S11-0860-Rev. A, 02-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4340DDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) Notes: PDM 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 67583 S11-0860-Rev. A, 02-Mar-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4340DDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 VGS = 10 V thru 4 V 48 ID - Drain Current (A) ID - Drain Current (A) 8 10 36 6 24 VGS = 3 V 12 VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 4 TC = 25 °C 2 TC = 125 °C 0 0.0 1.0 2.0 3.0 4.0 5.0 TC = - 55 °C VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.010 1500 Transfer Characteristics RDS(on) - On-Resistance (Ω) 0.009 VGS = 4.5 V 0.008 C - Capacitance (pF) 1200 Ciss 900 0.007 600 Coss 300 0.006 VGS = 10 V Crss 0.005 0 12 24 36 48 60 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 12 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 5 V 4 RDS(on) - On-Resistance (Normalized) 1.4 1.6 ID = 15.2 A Capacitance VGS = 10 V 1.2 VGS = 4.5 V VDS = 15 V 1.0 2 0.8 0 0 4 8 12 16 20 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 8 Document Number: 67583 S11-0860-Rev. A, 02-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4340DDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.030 ID = 15.2 A 10 IS - Source Current (A) RDS(on) - On-Resistance (Ω) TJ = 150 °C 0.024 1 TJ = 25 °C 0.018 0.1 0.012 TJ = 125 °C 0.01 0.006 TJ = 25 °C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0.000 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.E-01 1.E-02 64 IR - Reverse Current (A) 1.E-03 1.E-04 1.E-05 1.E-06 16 1.E-07 1.E-08 - 50 0 - 25 0 25 50 75 100 125 150 0.001 20V Power (W) 48 80 On-Resistance vs. Gate-to-Source Voltage 16V 32 0.01 0.1 Time (s) 1 10 TJ - Temperature (°C) Reverse Current vs. Junction Temperature 100 IDM Limited 10 ID - Drain Current (A) ID Limited 100 μs 1 ms 10 ms 1 Limited by RDS(on)* 0.1 DC TC = 25 °C Single Pulse 0.01 0.01 0.1 1 BVDSS Limited 10 100 100 ms 1s 10 s Single Pulse Power VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67583 S11-0860-Rev. A, 02-Mar-11 www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4340DDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 25 20 ID - Drain Current (A) Package Limited 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 6.5 2.0 5.2 1.6 Power (W) Power (W) 3.9 1.2 2.6 0.8 1.3 0.4 0.0 0 25 50 75 100 125 150 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 67583 S11-0860-Rev. A, 02-Mar-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4340DDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 2. Per Unit Base = RthJA = 87 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67583. Document Number: 67583 S11-0860-Rev. A, 02-Mar-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 14 LEAD MILLIMETERS Dim A A1 B C D E e H L Ø 0.25 (GAGE PLANE) H INCHES Min 0.053 0.004 0.015 0.007 0.336 0.149 Min 1.35 0.10 0.38 0.18 8.55 3.8 Max 1.75 0.20 0.51 0.23 8.75 4.00 Max 0.069 0.008 0.020 0.009 0.344 0.157 14 13 12 11 10 9 8 E 1 2 3 4 5 6 7 1.27 BSC 5.80 0.50 0_ 6.20 0.93 8_ 0.050 BSC 0.228 0.020 0_ 0.244 0.037 8_ D ECN: T-05766—Rev. F, 19-Sep-05 DWG: 5499 C ALL LEADS 0.101 mm A e B A1 L Ø 0.004″ Document Number: 71193 19-Sep-05 www.vishay.com 1 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-14 RECOMMENDED MINIMUM PADS FOR SO-14 0.322 (8.179) 0.047 (1.194) (6.248) 0.022 (0.559) 0.050 (1.270) 0.028 (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index (3.861) 0.246 0.152 APPLICATION NOTE Document Number: 72607 Revision: 21-Jan-08 www.vishay.com 23 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1