Si4348DY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Gen II Power MOSFET
PRODUCT SUMMARY
VDS (V)
30
APPLICATIONS
ID (A)
11 10
rDS(on) (W)
0.0125 @ VGS = 10 V 0.014 @ VGS = 4.5 V
D High-Side DC/DC Conversion − Notebook − Desktop − Server D Notebook Logic DC/DC, Low-Side
D
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4348DY—E3 (Lead Free) Si4348DY-T1—E3 (Lead Free with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30 "12 11 8.9 40 2.2 2.5 1.6
Steady State
Unit
V
8.0 6.5 A
1.20 1.31 0.84 −55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72790 S-40438—Rev. A, 15-Mar-04 www.vishay.com t v 10 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
43 74 19
Maximum
50 95 25
Unit
_C/W
1
Si4348DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 11 A VGS = 4.5 V, ID = 10 A VDS = 15 V, ID = 11 A IS = 2.2 A, VGS = 0 V 30 0.0105 0.0115 40 0.75 1.1 0.0125 0.014 0.8 2.0 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.2 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W VDS = 15 V, VGS = 4.5 V, ID = 11 A 15 5 4.3 0.5 10 11 55 9 22 15 17 85 15 35 ns W 23 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 10 thru 4 V 40 I D − Drain Current (A) 3V I D − Drain Current (A) 40 50
Transfer Characteristics
30
30
20
20 TC = 125_C 25_C
10
10
0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com
0 0.0
−55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS − Gate-to-Source Voltage (V) Document Number: 72790 S-40438—Rev. A, 15-Mar-04
2
Si4348DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.020 r DS(on) − On-Resistance ( W ) 2600
Vishay Siliconix
Capacitance
0.012
VGS = 4.5 V
C − Capacitance (pF)
0.016
2080
Ciss
1560
0.008
VGS = 10 V
1040
0.004
520 Crss 0 5 10
Coss
0.000 0 10 20 30 40 50
0
15
20
25
30
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
Gate Charge
6 V GS − Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 4 8 12 16 20 Qg − Total Gate Charge (nC) VDS = 15 V ID = 11 A 1.4 rDS(on) − On-Resiistance (Normalized) 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 11 A
1.2
1.0
0.8
0.6 −50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50 TJ = 150_C I S − Source Current (A) 10 0.05
On-Resistance vs. Gate-to-Source Voltage
r DS(on) − On-Resistance ( W )
0.04
0.03
ID = 11 A
1
TJ = 25_C
0.02
0.01
0.1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V)
Document Number: 72790 S-40438—Rev. A, 15-Mar-04
www.vishay.com
3
Si4348DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 0.2 ID = 250 mA V GS(th) Variance (V) −0.0 −0.2 −0.4 −0.6 −0.8 −50 6 Power (W) 18 30
Single Pulse Power, Junction-to-Ambient
24
12
−25
0
25
50
75
100
125
150
0 10−2
10−1
1 Time (sec)
10
100
1000
TJ − Temperature (_C)
100
Safe Operating Area
rDS(on) Limited IDM Limited
10 I D − Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 100 1s 10 s dc 0.01 0.1
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 71_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
www.vishay.com
4
Document Number: 72790 S-40438—Rev. A, 15-Mar-04
Si4348DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Vishay Siliconix
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
Document Number: 72790 S-40438—Rev. A, 15-Mar-04
www.vishay.com
5
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