Si4362DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V
ID (A)
20 19
D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested
APPLICATIONS
D DC/DC Converters D Synchronous Rectifiers
SO-8
D S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G
Ordering Information: Si4362DY Si4362DY-T1 (with Tape and Reel) Si4362DY—E3 (Lead Free) Si4362DY-T1—E3 (Lead Free with Tape and Reel)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limits
30 "12 20 15 60 2.9 3.5 2.2 −55 to 150
Unit
A
W
THERMAL RESISTANCE RATINGSa
Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec Document Number: 71628 S-40762—Rev. E, 19-Apr-04 www.vishay.com
Symbol
RthJA RthJF
Typical
29 13
Maximum
35 16
Unit
_C/W
1
Si4362DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Source Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 19 A VDS = 15 V, ID = 20 A IS = 2.9 A, VGS = 0 V 30 0.0035 0.0042 90 0.75 1.1 0.0045 0.0055 0.6 "100 1 5 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 20 A 42 12.8 7.7 1.3 17 14 158 43 50 2.2 30 25 230 65 80 ns W 55 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60 VGS = 10 thru 3 V 50 40 30 20 10 0 0 2 4 6 8 10 2V 50 40 30 20 60
Transfer Characteristics
I D − Drain Current (A)
I D − Drain Current (A)
TC = 125_C 10 0 0.0 25_C −55_C 1.5 2.0 2.5 3.0
0.5
1.0
VDS − Drain-to-Source Voltage (V) www.vishay.com
VGS − Gate-to-Source Voltage (V) Document Number: 71628 S-40762—Rev. E, 19-Apr-04
2
Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
On-Resistance vs. Drain Current
8000
Capacitance
r DS(on) − On-Resistance ( W )
0.008 C − Capacitance (pF)
6000
Ciss
0.006 VGS = 4.5 V 0.004 VGS = 10 V 0.002
4000
2000 Coss Crss
0.000 0 10 20 30 40 50
0 0 6 12 18 24 30
ID − Drain Current (A)
VDS − Drain-to-Source Voltage (V)
5 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 20 A
Gate Charge
1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 20 A
4
1.4 rDS(on) − On-Resiistance (Normalized)
3
1.2
2
1.0
1
0.8
0 0 10 20 30 40 50
0.6 −50
−25
0
25
50
75
100
125
150
Qg − Total Gate Charge (nC)
TJ − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.025
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10
r DS(on) − On-Resistance ( W )
0.020
I S − Source Current (A)
0.015
TJ = 25_C
0.010 ID = 20 A 0.005
1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD − Source-to-Drain Voltage (V) Document Number: 71628 S-40762—Rev. E, 19-Apr-04
0.000 0 2 4 6 8 10
VGS − Gate-to-Source Voltage (V)
www.vishay.com
3
Si4362DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 0.2 V GS(th) Variance (V) −0.0 Power (W) −0.2 −0.4 −0.6 −0.8 −50 ID = 250 mA 60 50
Single Pulse Power
40 30 20 10
−25
0
25
50
75
100
125
150
0 10−2
10−1
1 Time (sec)
10
100
600
TJ − Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec)
Notes: PDM t1 t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 67_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted
t1 t2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1
Normalized Effective Transient Thermal Impedance
Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com
4
Document Number: 71628 S-40762—Rev. E, 19-Apr-04
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