SI4370DY

Si4370DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 Channel 1 30 Channel-2 Channel 2 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.022 @ VGS = 10 V 0.028 @ VGS = 4.5 V ID (A) 7.5 6.5 7.5 6.5 FEATURES D D D D LITTLE FOOTr Plus Schottky Si4830DY Pin Compatible PWM Optimized 100% Rg Tested APPLICATIONS D Asymmetrical Buck-Boost DC/DC Converter SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 2.0 D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: Si4370DY—E3 (Lead Free) Si4370DY-T1—E3 (Lead Free with Tape and Reel) N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) 10 secs Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Steady State Channel-1 30 "20 5.7 4.6 30 0.9 1.1 0.7 −55 to 150 W _C A Symbol VDS VGS ID IDM IS PD TJ, Tstg Channel-1 "20 7.5 6.0 1.7 2.0 1.3 Channel-2 "12 Channel-2 "12 Unit V Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS MOSFET Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72022 S-32621—Rev. C, 29-Dec-03 www.vishay.com t v 10 sec Steady-State Steady-State Schottky Typ 53 93 35 Symbol RthJA RthJF Typ 52 93 35 Max 62.5 110 40 Max 62.5 110 40 Unit _C/W 1 Si4370DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage Gate Threshold Voltage Gate-Body Gate Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA 50 VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "12 V VDS = 30 V, VGS = 0 V V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85_C V On-State On State Drain Currentb ID( ) D(on) VDS = 5 V, VGS = 10 V VGS = 10 V ID = 7.5 A V, 5 Drain-Source On-State Drain Source On State Resistanceb rDS( ) DS(on) VGS = 4.5 V ID = 6.5 A 5 V, 5 Forward Transconductanceb Diode Forward Voltageb gf fs VSD VDS = 15 V ID = 7.5 A V, 5 IS = 1 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 20 0.014 0.015 0.024 0.020 19 21 0.75 0.47 1.2 0.5 0.022 0.022 0.030 0.028 S V W 1.0 0.8 3.0 2.0 "100 "100 1 100 15 2000 A mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Total Gate Charge Gate-Source Gate Source Charge Gate-Drain Gate Drain Charge Gate Resistance Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Source Drain Reverse Recovery Time Qg Qgs Qgd d Rg td( ) d(on) tr td( ff) d(off) tf trr IF = 1.7 A di/dt = 100 A/ms 7 A, VDS = 15 V, VGS = 4.5 V, ID = 7.5 A 5 5 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 VDD = 15 V, RL = 15 W V, ID ^ 1 A, VGEN = 10 V, Rg = 6 W Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.5 0.5 7 11.5 2.9 3.8 2.5 3.5 1.5 1.8 9 12 10 10 19 40 9 9 35 28 1.9 1.9 15 20 17 17 30 66 15 15 55 45 ns W 11 18 nC nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Forward Voltage Drop Symbol VF Test Condition IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 100_C Vr = −30 V, TJ = 125_C Vr = 10 V Min Typ 0.47 0.36 0.004 0.7 3.0 50 Max 0.50 0.42 0.100 10 20 Unit V Maximum Reverse Leakage Current Junction Capacitance www.vishay.com Irm CT mA pF 2 Document Number: 72022 S-32621—Rev. C, 29-Dec-03 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 25 I D − Drain Current (A) 20 15 10 5 3V 0 0 2 4 6 8 10 VDS − Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) I D − Drain Current (A) VGS = 10 thru 5 V 30 4V 25 20 15 10 5 MOSFET CHANNEL-1 Transfer Characteristics TC = 125_C 25_C −55_C On-Resistance vs. Drain Current 0.040 r DS(on) − On-Resistance ( W ) 1200 Capacitance 0.030 VGS = 4.5 V 0.020 VGS = 10 V C − Capacitance (pF) 960 Ciss 720 480 Coss 240 Crss 0.010 0.000 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A 8 r DS(on) − On-Resistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.5 A 6 4 2 0 0 3 6 9 12 15 Qg − Total Gate Charge (nC) Document Number: 72022 S-32621—Rev. C, 29-Dec-03 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on) − On-Resistance ( W ) I S − Source Current (A) 0.06 0.05 0.04 ID = 7.5 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) MOSFET CHANNEL-1 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 1 TJ = 25_C 0.1 0.0 Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA −0.0 −0.2 −0.4 −0.6 −0.8 −50 20 Power (W) 60 100 Single Pulse Power, Junction-to-Ambient 80 40 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 Time (sec) 1 10 TJ − Temperature (_C) 100 Limited by rDS(on) 10 I D − Drain Current (A) Safe Operating Area, Junction-to-Foot 1 ms 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) www.vishay.com Document Number: 72022 S-32621—Rev. C, 29-Dec-03 4 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 MOSFET CHANNEL 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 93_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72022 S-32621—Rev. C, 29-Dec-03 www.vishay.com 5 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 25 I D − Drain Current (A) 20 3V 15 10 5 0 0 2 4 6 8 10 VDS − Drain-to-Source Voltage (V) VGS = 10 thru 4 V 30 25 I D − Drain Current (A) 20 15 10 TC = 125_C 5 0 0.0 25_C −55_C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 MOSFET CHANNEL-2 Transfer Characteristics VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.040 r DS(on) − On-Resistance ( W ) 2000 Capacitance C − Capacitance (pF) 0.032 1600 Ciss 0.024 VGS = 4.5 V VGS = 10 V 1200 0.016 800 0.008 400 Crss Coss 0.000 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.5 A 6 4 2 0 0 5 10 15 20 25 Qg − Total Gate Charge (nC) www.vishay.com r DS(on) − On-Resistance (W ) (Normalized) −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 72022 S-32621—Rev. C, 29-Dec-03 6 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on) − On-Resistance ( W ) 0.04 ID = 7.5 A I S − Source Current (A) 0.05 MOSFET CHANNEL-2 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 0.03 1 TJ = 25_C 0.02 0.01 0.1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.3 80 0.2 V GS(th) Variance (V) 0.1 −0.0 −0.1 −0.2 −0.3 −0.4 −50 0 10−3 ID = 250 mA Power (W) 60 100 Single Pulse Power, Junction-to-Ambient 40 20 −25 0 25 50 75 100 125 150 10−2 10−1 Time (sec) 1 10 TJ − Temperature (_C) 100 Limited by rDS(on) 10 I D − Drain Current (A) Safe Operating Area, Junction-to-Foot 1 ms 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 VDS − Drain-to-Source Voltage (V) 100 Document Number: 72022 S-32621—Rev. C, 29-Dec-03 www.vishay.com 7 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 MOSFET CHANNEL-2 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 93_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 8 Document Number: 72022 S-32621—Rev. C, 29-Dec-03 Si4370DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 10 TJ = 150_C I F − Forward Current (A) 1 SCHOTTKY Forward Voltage Drop 20 10 I R − Reverse Current (mA) 0.1 30 V 24 V TJ = 25_C 0.01 0.001 0.0001 0 25 50 75 100 125 150 TJ − Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF − Forward Voltage Drop (V) 200 Capacitance 160 C − Capacitance (pF) 120 80 Coss 40 0 0 6 12 18 24 30 VDS − Drain-to-Source Voltage (V) Document Number: 72022 S-32621—Rev. C, 29-Dec-03 www.vishay.com 9