Si4405DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 30
FEATURES
ID (A)
- 17
rDS(on) (W)
0.0075 @ VGS = - 10 V
D TrenchFETr Power MOSFETS D 100% Rg Tested
APPLICATIONS
D Battery and Load Switching - Notebook Computers - Notebook Battery Packs
S
SO-8
S S S G 1 2 3 4 Top View D Ordering Information: Si4405DY Si4405DY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D D D D
G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 13 IDM IS - 2.9 3.5 2.1 - 55 to 150 - 60 - 1.30 1.6 1.0 W _C -9 A
Symbol
VDS VGS
10 secs
Steady State
- 30 "20
Unit
V
- 17
- 11
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71913 S-31726—Rev. D, 18-Aug-03 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
29 67 13
Maximum
35 80 16
Unit
_C/W
1
Si4405DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 17 A VDS = - 15 V, ID = - 17 A IS = - 2.9 A, VGS = 0 V - 30 0.006 47 - 0.75 - 1.1 0.0075 - 1.0 - 3.0 "100 -1 - 10 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 2.9 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W V, ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 3 VDS = - 15 V, VGS = - 10 V, ID = - 17 A 105 17.5 29.5 4 25 15 190 80 70 6.5 40 25 285 120 110 ns W 160 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60 VGS = 10 thru 5 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 60
Transfer Characteristics
40 4V 30
40
30
20
20 TC = 125_C 10 25_C - 55_C 3.0 3.5 4.0 4.5
10
0 0 1 2 3 4 5
0 0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com
2
Document Number: 71913 S-31726—Rev. D, 18-Aug-03
Si4405DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.010 r DS(on) - On-Resistance ( W ) 7000
Capacitance
C - Capacitance (pF)
0.008 VGS = 10 V 0.006
5600
Ciss
4200
0.004
2800 Coss
0.002
1400 Crss
0.000 0 10 20 30 40 50
0 0 6 12 18 24 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 17 A 8 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 17 A 1.4
6
r DS(on) - On-Resistance (W ) (Normalized)
1.2
4
1.0
2
0 0 22 44 66 88 110 Qg - Total Gate Charge (nC)
0.8 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
60 0.030
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
10
TJ = 150_C
r DS(on) - On-Resistance ( W )
0.020
ID = 17 A
1 TJ = 25_C
0.010
0.1 0.0
0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 71913 S-31726—Rev. D, 18-Aug-03
www.vishay.com
3
Si4405DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4 ID = 250 mA 60 50
Single Pulse Power
0.2 V GS(th) Variance (V)
- 0.0 Power (W)
40
- 0.2
30
- 0.4
20
- 0.6
10
- 0.8 - 50
- 25
0
25
50
75
100
125
150
0 10 -2
10 -1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
Safe Operating Area, Junction-to-Case
100 1 ms Limited by rDS(on) 10 I D - Drain Current (A) 10 ms
1
100 ms 1s
0.1
TC = 25_C Single Pulse
10 s dc
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05
t1 PDM
0.02
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 67_C/W
t1 t2
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
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4
Document Number: 71913 S-31726—Rev. D, 18-Aug-03
Si4405DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10
Document Number: 71913 S-31726—Rev. D, 18-Aug-03
www.vishay.com
5
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