SI4405DY-T1

Si4405DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 FEATURES ID (A) - 17 rDS(on) (W) 0.0075 @ VGS = - 10 V D TrenchFETr Power MOSFETS D 100% Rg Tested APPLICATIONS D Battery and Load Switching - Notebook Computers - Notebook Battery Packs S SO-8 S S S G 1 2 3 4 Top View D Ordering Information: Si4405DY Si4405DY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 13 IDM IS - 2.9 3.5 2.1 - 55 to 150 - 60 - 1.30 1.6 1.0 W _C -9 A Symbol VDS VGS 10 secs Steady State - 30 "20 Unit V - 17 - 11 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71913 S-31726—Rev. D, 18-Aug-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 29 67 13 Maximum 35 80 16 Unit _C/W 1 Si4405DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 17 A VDS = - 15 V, ID = - 17 A IS = - 2.9 A, VGS = 0 V - 30 0.006 47 - 0.75 - 1.1 0.0075 - 1.0 - 3.0 "100 -1 - 10 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 2.9 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W V, ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 3 VDS = - 15 V, VGS = - 10 V, ID = - 17 A 105 17.5 29.5 4 25 15 190 80 70 6.5 40 25 285 120 110 ns W 160 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 5 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 60 Transfer Characteristics 40 4V 30 40 30 20 20 TC = 125_C 10 25_C - 55_C 3.0 3.5 4.0 4.5 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71913 S-31726—Rev. D, 18-Aug-03 Si4405DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.010 r DS(on) - On-Resistance ( W ) 7000 Capacitance C - Capacitance (pF) 0.008 VGS = 10 V 0.006 5600 Ciss 4200 0.004 2800 Coss 0.002 1400 Crss 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 17 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 17 A 1.4 6 r DS(on) - On-Resistance (W ) (Normalized) 1.2 4 1.0 2 0 0 22 44 66 88 110 Qg - Total Gate Charge (nC) 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.030 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 TJ = 150_C r DS(on) - On-Resistance ( W ) 0.020 ID = 17 A 1 TJ = 25_C 0.010 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71913 S-31726—Rev. D, 18-Aug-03 www.vishay.com 3 Si4405DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 ID = 250 mA 60 50 Single Pulse Power 0.2 V GS(th) Variance (V) - 0.0 Power (W) 40 - 0.2 30 - 0.4 20 - 0.6 10 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 1 ms Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 67_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71913 S-31726—Rev. D, 18-Aug-03 Si4405DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71913 S-31726—Rev. D, 18-Aug-03 www.vishay.com 5