SI4411DY-T1

Si4411DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 0.0155 @ VGS = - 4.5 V - 10 FEATURES ID (A) - 13 rDS(on) (W) 0.010 @ VGS = - 10 V D TrenchFETr Power MOSFET APPLICATIONS D Notebook - Load Switch - Battery Switch S SO-8 S S S G 1 2 3 4 Top View D Ordering Information: Si4411DY Si4411DY-T1 (with tape and reel) P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 10.5 IDM IS - 2.7 3.0 1.9 - 55 to 150 - 50 - 1.36 1.5 0.95 W _C - 7.5 A Symbol VDS VGS 10 secs Steady State - 30 "20 Unit V - 13 -9 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72149 S-03539—Rev. B, 24-Mar-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 33 70 16 Maximum 42 85 21 Unit _C/W 1 Si4411DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 13 A VGS = - 4.5 V, ID = - 10 A VDS = - 15 V, ID = - 13 A IS = - 2.7 A, VGS = 0 V - 30 0.008 0.0125 40 - 0.74 - 1.1 0.010 0.0155 - 1.0 3.0 "100 -1 - 10 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf Rg trr IF = - 2.1 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W V, ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 15 V, VGS = - 5 V, ID = - 13 A 43 8.5 18.5 18 15 140 75 3.4 60 100 30 25 250 120 W ns ns 65 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 30 20 3V 10 20 TC = 125_C 10 25_C - 55_C 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72149 S-03539—Rev. B, 24-Mar-03 www.vishay.com 2 Si4411DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.020 r DS(on) - On-Resistance ( W ) 5500 Vishay Siliconix Capacitance C - Capacitance (pF) 0.016 VGS = 4.5 V 0.012 VGS = 10 V 0.008 4400 Ciss 3300 2200 Coss 0.004 1100 Crss 0.000 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 13 A 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 13 A 1.4 4 r DS(on) - On-Resistance (W ) (Normalized) 20 30 40 50 5 1.2 3 1.0 2 1 0.8 0 0 10 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.030 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.024 0.018 ID = 13 A 1 TJ = 25_C 0.012 0.006 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72149 S-03539—Rev. B, 24-Mar-03 www.vishay.com 3 Si4411DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 50 Single Pulse Power 0.6 V GS(th) Variance (V) ID = 250 mA 0.4 Power (W) 40 30 0.2 20 0.0 10 - 0.2 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72149 S-03539—Rev. B, 24-Mar-03 Si4411DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72149 S-03539—Rev. B, 24-Mar-03 www.vishay.com 5