Si4411DY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 30 0.0155 @ VGS = - 4.5 V - 10
FEATURES
ID (A)
- 13
rDS(on) (W)
0.010 @ VGS = - 10 V
D TrenchFETr Power MOSFET
APPLICATIONS
D Notebook - Load Switch - Battery Switch
S
SO-8
S S S G 1 2 3 4 Top View D Ordering Information: Si4411DY Si4411DY-T1 (with tape and reel) P-Channel MOSFET 8 7 6 5 D D D D
G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 10.5 IDM IS - 2.7 3.0 1.9 - 55 to 150 - 50 - 1.36 1.5 0.95 W _C - 7.5 A
Symbol
VDS VGS
10 secs
Steady State
- 30 "20
Unit
V
- 13
-9
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72149 S-03539—Rev. B, 24-Mar-03 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
33 70 16
Maximum
42 85 21
Unit
_C/W
1
Si4411DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "20 V VDS = - 24 V, VGS = 0 V VDS = - 24 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 13 A VGS = - 4.5 V, ID = - 10 A VDS = - 15 V, ID = - 13 A IS = - 2.7 A, VGS = 0 V - 30 0.008 0.0125 40 - 0.74 - 1.1 0.010 0.0155 - 1.0 3.0 "100 -1 - 10 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf Rg trr IF = - 2.1 A, di/dt = 100 A/ms VDD = - 15 V, RL = 15 W V, ID ^ - 1 A, VGEN = - 10 V, RG = 6 W VDS = - 15 V, VGS = - 5 V, ID = - 13 A 43 8.5 18.5 18 15 140 75 3.4 60 100 30 25 250 120 W ns ns 65 nC
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50
Transfer Characteristics
30
30
20 3V 10
20 TC = 125_C 10 25_C - 55_C
0 0 1 2 3 4 5
0 0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V) Document Number: 72149 S-03539—Rev. B, 24-Mar-03
www.vishay.com
2
Si4411DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.020 r DS(on) - On-Resistance ( W ) 5500
Vishay Siliconix
Capacitance
C - Capacitance (pF)
0.016 VGS = 4.5 V 0.012 VGS = 10 V 0.008
4400 Ciss 3300
2200 Coss
0.004
1100 Crss
0.000 0 10 20 30 40 50
0 0 6 12 18 24 30
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
6 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 13 A 1.6
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 13 A 1.4
4
r DS(on) - On-Resistance (W ) (Normalized) 20 30 40 50
5
1.2
3
1.0
2
1
0.8
0 0 10 Qg - Total Gate Charge (nC)
0.6 - 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50 0.030
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
TJ = 150_C 10
r DS(on) - On-Resistance ( W )
0.024
0.018
ID = 13 A
1 TJ = 25_C
0.012
0.006
0.1 0.0
0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Document Number: 72149 S-03539—Rev. B, 24-Mar-03
www.vishay.com
3
Si4411DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8 50
Single Pulse Power
0.6 V GS(th) Variance (V) ID = 250 mA 0.4 Power (W)
40
30
0.2
20
0.0 10
- 0.2
- 0.4 - 50
- 25
0
25
50
75
100
125
150
0 0.01
0.1
1 Time (sec)
10
100
600
TJ - Temperature (_C)
Safe Operating Area, Junction-to-Case
100
Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2
Notes:
0.1 0.1 0.05
t1 PDM
0.02
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 70_C/W
t1 t2
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72149 S-03539—Rev. B, 24-Mar-03
Si4411DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Vishay Siliconix
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10
Document Number: 72149 S-03539—Rev. B, 24-Mar-03
www.vishay.com
5
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