SI4413ADY_RC

SI4413ADY_RC

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SI4413ADY_RC - R-C Thermal Model Parameters - Vishay Siliconix

  • 数据手册
  • 价格&库存
SI4413ADY_RC 数据手册
Si4413ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 6.1480 24.4080 26.0454 27.2274 Ambient 22.0422 m 56.2436 m 3.5677 2.3495 Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot 1.1236 4.4461 9.9726 5.3859 Foot 9.0587 m 129.7015 m 138.7031 m 11.4484 m Thermal Capacitance (Joules/°C) This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74307 Revision: 07-May-07 www.vishay.com 1 Si4413ADY_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4 Note: NA indicates not applicable Ambient 2.4210 16.7080 13.7271 51.0530 Ambient 2.9174 m 28.3980 m 39.1252 m 1.4468 Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot 4.4473 5.1144 6.7581 4.6120 Foot 5.1291 m 11.2562 m 82.6299 m 16.4486 m Thermal Capacitance (Joules/°C) Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 74307 Revision: 07-May-07 Si4413ADY_RC Vishay Siliconix Document Number: 74307 Revision: 07-May-07 www.vishay.com 3
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