SI4413DY

Si4413DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 0.0145 @ VGS = -4.5 V - 10 FEATURES ID (A) -13 rDS(on) (W) 0.0095 @ VGS = -10 V D TrenchFETr Power MOSFET APPLICATIONS D Notebook - Load switch - Battery switch S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 10.5 IDM IS -2.7 3.0 1.9 -55 to 150 -50 -1.36 1.5 0.95 W _C -7.5 A Symbol VDS VGS 10 secs Steady State -30 "20 Unit V -13 -9 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72054 S-21977—Rev. A, 04-Nov-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 33 70 16 Maximum 42 84 21 Unit _C/W 1 Si4413DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -13 A VGS = -4.5 V, ID = -10 A VDS = -15 V, ID = -13 A IS = -2.7 A, VGS = 0 V -30 0.0075 0.0115 50 -0.74 -1.1 0.0095 0.0145 -1.0 3.0 "100 -1 -10 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf Rg trr IF = -2.1 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -15 V, VGS = -5 V, ID = -13 A 61 15.5 32 21 18 170 97 3.4 70 110 35 30 260 150 W ns ns 95 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 30 20 20 TC = 125_C 10 10 3V 2V 0 0 1 2 3 4 5 25_C 0 0.0 -55 _C 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72054 S-21977—Rev. A, 04-Nov-02 www.vishay.com 2 Si4413DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.020 r DS(on) - On-Resistance ( W ) 7000 Ciss Vishay Siliconix Capacitance VGS = 4.5 V 0.012 C - Capacitance (pF) 0.016 5600 4200 0.008 VGS = 10 V 2800 0.004 1400 Coss 0.000 0 10 20 30 40 50 0 0 6 12 18 24 Crss 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 13 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 13 A 1.4 6 r DS(on) - On-Resistance (W ) (Normalized) 44 66 88 110 1.2 4 1.0 2 0.8 0 0 22 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 100 0.030 On-Resistance vs. Gate-to-Source Voltage 10 TJ = 150_C r DS(on) - On-Resistance ( W ) 0.024 I S - Source Current (A) 0.018 ID = 13 A 0.012 1 TJ = 25_C 0.006 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72054 S-21977—Rev. A, 04-Nov-02 www.vishay.com 3 Si4413DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 100 Single Pulse Power, Junction-to-Ambient 0.8 V GS(th) Variance (V) ID = 250 mA Power (W) 80 0.6 60 0.4 40 0.2 20 0.0 -0.2 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 10 ms 1 100 ms 1s 0.1 TC = 25_C Single Pulse 10 s dc 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 4 Document Number: 72054 S-21977—Rev. A, 04-Nov-02 Si4413DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72054 S-21977—Rev. A, 04-Nov-02 www.vishay.com 5