SI4420BDY

Specification Comparison Vishay Siliconix Si4420BDY vs. Si4420DY Description: Package: Pin Out: N-Channel, 30-V (D-S) MOSFET SO-8 Identical Part Number Replacements: Si4420BDY-T1-E3 Replaces Si4420DY-T1-E3 Si4420BDY-T1-E3 Replaces Si4420DY-T1 Summary of Performance: The Si4420BDY is the replacement to the original Si4420DY; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Si4420BDY Si4420DY Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range Maximum Junction-to-Ambient TA = 25°C TA = 70°C VDS VGS ID IDM IS PD Tj & Tstg RthJA 30 +20 13.5 10.8 50 2.3 2.5 1.6 -55 to 150 50 30 +20 13.5 10.8 50 2.7 3.0 1.9 -55 to 150 42 W °C °C/W A V SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS = 10 V VGS= 10 V VGS = 4.5 V VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgt Qgs Qgd Rg td(on) tr td(off) tf trr 30 0.007 0.009 50 0.75 16 31 6.6 4.0 1.0 15 11 40 12 30 1.1 25 50 0.0085 0.011 1.0 3.0 +100 1 30 0.0075 0.010 50 NS 29 58 12 9.5 2.1 22 13 82 30 50 1.1 45 90 0.009 0.013 1.0 2.0 3.0 +100 1 V nA µA A Ω S V Symbol Min Si4420BDY Typ Max Min Si4420DY Typ Max Unit Dynamic Total Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance nC Ω 0.5 1.5 25 18 60 20 50 0.5 4.6 35 20 125 45 75 Switching Turn-On Time* Turn-Off Time* Source-Drain Reverse Recovery Time NS denotes parameter not specified ns Document Number 74060 06-May-05 www.vishay.com