SI4420BDY_06

Si4420BDY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) 0.0085 at VGS = 10 V 0.0110 at VGS = 4.5 V ID (A) 13.5 11 FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested Pb-free RoHS COMPLIANT SO-8 D S S S G 1 2 3 4 Top View Ordering Information: Si4420BDY-T1-E3 (Lead (Pb)-free) 8 7 6 5 D D D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Conduction)a L = 0.1 mH TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 2.5 1.6 - 55 to 150 2.3 20 20 1.4 0.9 mJ W °C 13.5 10.8 50 1.26 10 sec 30 ± 20 9.5 7.5 A Steady State Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 Board, t ≤ 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm. Document Number: 73067 S-61013-Rev. B, 12-Jun-06 www.vishay.com 1 t < 10 sec Steady State Steady State Symbol RthJA RthJF Typical 40 70 23 Maximum 50 90 28 °C/W Unit Si4420BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgt Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.3 A, di/dt = 100 A/µs VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 0.5 VDS = 15 V, VGS = 10 V, ID = 13.5 A VDS = 15 V, VGS = 5 V, ID = 13.5 A 16 31 6.6 4.0 1.0 15 11 40 12 30 1.5 25 18 60 20 50 ns Ω 25 50 nC a Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Test Conditions VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 13.5 A VGS = 4.5 V, ID = 11 A VDS = 15 V, ID = 13.5 A IS = 2.3 A, VGS = 0 V Min 1.0 Typ Max 3.0 ± 100 1 5 Unit V nA µA A 30 0.007 0.009 50 0.75 1.1 0.0085 0.0110 Ω S V Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C unless noted 50 45 40 VGS = 10 thru 4 V 40 35 30 I D - Drain Current (A) I D - Drain Current (A) 35 30 25 20 15 10 5 0 0 1 2 3 4 5 3V 25 20 15 TC = 125 °C 10 5 0 0.0 25 °C - 55 °C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 73067 S-61013-Rev. B, 12-Jun-06 Si4420BDY Vishay Siliconix TYPICAL CHARACTERISTICS 0.020 25 °C unless noted 3000 On-Resistance (Ω) 0.016 Capacitance (pF) 2500 Ciss 2000 0.012 VGS = 4.5 V 0.008 VGS = 10 V 0.004 1500 - C r DS(on) 1000 Coss Crss 500 0.000 0 10 ID 20 30 40 50 0 0 5 VDS 10 15 20 25 30 - Drain Current (A) - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 Gate-to-Source Voltage (V) VDS = 15 V ID = 13.5 A rDS(on) - On-Resistance (Normalized) 1.6 VGS = 10 V ID = 13.5 A Capacitance 8 1.4 6 1.2 4 1.0 V GS - 2 0.8 0 0 5 Qg 10 15 20 25 30 0.6 - 50 - 25 0 25 50 75 100 125 150 - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge 50 0.05 On-Resistance vs. Junction Temperature 0.04 I S - Source Current (A) TJ = 150 °C 10 On-Resistance (Ω) ID = 13.5 A 0.03 0.02 TJ = 25 °C r DS(on) 0.01 0.00 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 73067 S-61013-Rev. B, 12-Jun-06 www.vishay.com 3 Si4420BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 0.4 ID = 250 µA 40 50 0.2 V GS(th) Variance (V) 0.0 Power (W) 30 TA = 25 °C 20 - 0.2 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10- 2 10- 1 1 Time (sec) 10 100 600 TJ - Temperature (°C) Threshold Voltage Single Pulse Power 100 Limited by rDS(on) 10 1 ms 1 100 µs, 10 µs 10 ms 100 ms 0.1 1s TA = 25 °C Single Pulse 10 s dc, 100 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73067 S-61013-Rev. B, 12-Jun-06 Si4420BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73067 Document Number: 73067 S-61013-Rev. B, 12-Jun-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1