SI4425DDY

SPICE Device Model Si4425DDY Vishay Siliconix P-Channel 30 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 10 V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to + 125 °C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics SUBCIRCUIT MODEL SCHEMATIC D CGD M2 G RG Gy +– ETCV Gx CGS M1 R1 3 DBD S Note This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to the appropriate datasheet of the same number for guaranteed specification limits. Document Number: 64910 S09-0631-Rev. A, 20-Apr-09 www.vishay.com 1 SPICE Device Model Si4425DDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Gate-Source Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Ciss Coss Crss Qg Qgs Qgd VDS = - 15 V, VGS = - 10 V, ID = - 13 A VDS = - 15 V, VGS = - 4.5 V, ID = - 13 A VDS = - 15 V, VGS = 0 V, f = 1 MHz 2610 457 393 52 27 8 13 2610 460 395 53 27 8 13 nC pF VGS(th) RDS(on) gfs VSD VDS = VGS, ID = - 250 µA VGS = - 10 V, ID = - 13 A VGS = - 4.5 V, ID = - 10 A VDS = - 15 V, ID = - 13 A IS = - 10 A 2 0.0080 0.0136 32 - 0.79 0.0081 0.0137 40 - 0.80 V Ω S V SYMBOL TEST CONDITIONS SIMULATED MEASURED DATA DATA UNIT Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 64910 S09-0631-Rev. A, 20-Apr-09 SPICE Device Model Si4425DDY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted 50 2.0 40 1.5 ID - Drain Current (A) VGS = 10 V, 7 V, 6 V, 5 V, 4 V 30 ID - Drain Current (A) TJ = - 55 °C 1.0 TJ = 25 °C 20 VGS = 3 V 10 TJ = 125 °C 0.5 0 0.0 0.0 0.5 1.0 1.5 2.0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 0.020 4000 0.015 3000 Ciss VGS = 4.5 V RDS(on) - On-Resistance (Ω) 0.010 Capacitance (pF) 2000 VGS = 10 V 0.005 1000 Coss Crss 0.000 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 ID = 13 A 100 VGS - Gate-to-Source Voltage (V) 8 IS - Source Current (A) VDS = 15 V 6 VDS = 24 V 4 TJ = 150 °C 10 TJ = 25 °C 1 2 0 0 10 20 30 40 50 60 Qg - Total Gate Charge (nC) 0.1 0 0.2 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) Note Dots and squares represent measured data. Document Number: 64910 S09-0631-Rev. A, 20-Apr-09 www.vishay.com 3 SPICE Device Model Si4425DDY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted 1.8 0.04 ID = 13 A ID = 13 A RDS(on) - On-Resistance Normalized 1.5 VGS = 10 V, 4.5 V 1.2 RDS(on) - On-Resistance (Ω) 0.03 0.02 TJ = 125 °C 0.9 0.01 TJ = 25 °C 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 0.00 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Note Dots and squares represent measured data. www.vishay.com 4 Document Number: 64910 S09-0631-Rev. A, 20-Apr-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1