SI4429EDY

Si4429EDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0105 @ VGS = –10 V –30 0.0125 @ VGS = –4.5 V 0.0195 @ VGS = –2.5 V FEATURES ID (A) –13.0 –12.0 –9.0 D TrenchFETr Power MOSFET D VGS Surge Protection to 18 V D ESD Protected: 4000 V APPLICATIONS D Battery Switch D Load Switch D SO-8 S S S G 1 2 3 4 Top View S 8 7 6 5 D G D D D 5.5 kW ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID –10.0 IDM IS –2.5 3.0 1.9 –55 to 150 –50 –1.3 1.5 0.9 W _C –7.5 A Symbol VDS VGS 10 secs Steady State –30 "12 Unit V –13.0 –9.4 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 70709 S-04712—Rev. A, 24-Sep-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 32 68 15 Maximum 42 85 18 Unit _C/W 1 Si4429EDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "12 V VDS = –24 V, VGS = 0 V VDS = –24 V, VGS = 0 V, TJ = 55_C VDS v –5 V, VGS = –10 V VGS = –10 V, ID = –13.0 A Drain-Source On-State Resistancea rDS(on) VGS = –4.5 V, ID = –12.0 A VGS = –2.5 V, ID = –9.0 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = –15 V, ID = –13.0 A IS = –2.5 A, VGS = 0 V –30 0.0086 0.0105 0.0160 40 –0.8 –1.2 0.0105 0.0125 0.0195 S V W –0.60 "20 –1 –5 A mA V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = –15 V, RL = 15 W ID ^ –1 A, VGEN = –10 V, RG = 6 W VDS = –15 V, VGS = –4.5 V, ID = –13.0 A 51 9 12.0 14 19 54 41 21 29 80 62 ms 75 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 20 10,000 Gate Current vs. Gate-Source Voltage I GSS – Gate Current (mA) 16 I GSS – Gate Current (m A) 1,000 100 12 10 TJ = 150_C 1 0.1 TJ = 25_C 8 4 0 0 6 12 18 24 30 0.01 0 5 10 15 20 VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 70709 S-04712—Rev. A, 24-Sep-01 Si4429EDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 3 V 40 I D – Drain Current (A) I D – Drain Current (A) 40 50 Vishay Siliconix Transfer Characteristics 30 2V 20 30 20 TC = 125_C 10 25_C –55_C 10 0 0 2 4 6 8 10 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 9000 Capacitance r DS(on) – On-Resistance ( W ) 0.04 C – Capacitance (pF) 7500 Ciss 6000 0.03 VGS = 2.5 V 0.02 VGS = 4.5 V 0.01 VGS = 10 V 0.00 0 10 20 30 40 50 4500 3000 1500 Crss 0 6 Coss 0 12 18 24 30 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 15 V ID = 13.0 A 1.6 On-Resistance vs. Junction Temperature 3 r DS(on) – On-Resistance (W ) (Normalized) 4 1.4 VGS = 10 V ID = 13.0 A 1.2 2 1.0 1 0.8 0 0 10 20 30 40 50 60 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 70709 S-04712—Rev. A, 24-Sep-01 www.vishay.com 3 Si4429EDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 0.080 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C TJ = 25_C r DS(on) – On-Resistance ( W ) 0.064 I S – Source Current (A) 0.048 ID = 13.0 A 10 0.032 0.016 1 0 0.3 0.6 0.9 1.2 1.5 0.000 0 1 2 3 4 5 6 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.6 50 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 40 30 0.0 29 –0.2 10 –0.4 –50 –25 0 25 50 75 100 125 150 0 10–2 10–1 1 Time (sec) 10 100 600 TJ – Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 68_C/W t1 t2 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 70709 S-04712—Rev. A, 24-Sep-01 Si4429EDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 70709 S-04712—Rev. A, 24-Sep-01 www.vishay.com 5