SI4430BDY

Specification Comparison Vishay Siliconix Si4430BDY vs. Si4430DY Description: Package: Pin Out: N-Channel, 30-V (D-S) MOSFET SO-8 Identical Part Number Replacements: Si4430BDY-T1-E3 Replaces Si4430DY-T1-E3 Si4430BDY-T1-E3 Replaces Si4430DY-T1 Summary of Performance: The Si4430BDY is the replacement to the original Si4430DY; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Si4430BDY Si4430DY Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range Maximum Junction-to-Ambient TA = 25°C TA = 70°C VDS VGS ID IDM IS PD Tj & Tstg RthJA 30 +20 20 16 60 2.7 3.0 2.0 -55 to 150 41 30 +20 23 19 60 2.9 3.5 2.2 -55 to 150 35 W °C °C/W A V SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS = 10 V VGS= 10 V VGS = 4.5 V VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr 40 0.0037 0.0048 80 0.72 24 10.5 7.5 1.1 20 14 60 18 35 1.1 36 0.0045 0.006 1.0 3.0 +100 1 30 0.004 0.0068 80 0.8 36 15 12 2.2 20 15 105 40 50 1.2 55 nC 3.7 30 23 160 60 80 ns Ω NS 0.008 1.7 +100 1 V nA µA A Ω S V Symbol Min Si4430BDY Typ Max Min Si4430DY Typ Max Unit Dynamic Total Charge Gate-Source Charge Gate-Drain Charge Gate Resistance 0.5 1.7 30 22 90 30 50 1.0 Switching Turn-On Time* Turn-Off Time* Source-Drain Reverse Recovery Time Document Number 74061 06-May-05 www.vishay.com