SI4431BDY

Si4431BDY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 0.050 @ VGS = -4.5 V -5.8 rDS(on) (W) 0.030 @ VGS = -10 V ID (A) -7.5 SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 6.0 IDM IS -2.1 2.5 1.6 -55 to 150 -30 -1.2 1.5 0.9 W _C -4.6 A Symbol VDS VGS 10 secs Steady State -30 "20 Unit V - 7.5 -5.7 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72092 S-22437—Rev. A, 20-Jan-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 38 70 22 Maximum 50 85 28 Unit _C/W 1 Si4431BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -10 V ID(on) VDS = -5 V, VGS = -4.5 V VGS = -10 V, ID = -7.5 A rDS(on) gfs VSD VGS = -4.5 V, ID = -5.8 A VDS = -15 V, ID = -7.5 A IS = -2.1 A, VGS = 0 V -30 -7 0.023 0.036 18 -0.78 -1.1 0.030 0.050 -1.0 -3.0 "100 -1 -10 V nA mA A A W S V Symbol Test Condition Min Typ Max Unit On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -2.1 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -15 V, VGS = -5 V, ID = -7.5 A 13 3.6 6 10 10 70 47 45 20 20 110 70 80 ns 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D - Drain Current (A) I D - Drain Current (A) 4V 24 30 Transfer Characteristics 18 18 12 12 TC = 125_C 6 25_C -55 _C 2.5 3.0 3.5 4.0 4.5 6 3V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72092 S-22437—Rev. A, 20-Jan-03 Si4431BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.08 r DS(on) - On-Resistance ( W ) 1600 1400 C - Capacitance (pF) 0.06 1200 1000 800 600 400 200 0.00 0 5 10 15 20 25 30 0 0 6 12 18 24 30 Crss Coss Ciss Vishay Siliconix Capacitance 0.04 VGS = 4.5 V VGS = 10 V 0.02 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.5 A 1.4 6 r DS(on) - On-Resistance (W ) (Normalized) 10 15 20 25 1.2 4 1.0 2 0.8 0 0 5 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.08 ID = 2 A 0.06 ID = 7.5 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72092 S-22437—Rev. A, 20-Jan-03 www.vishay.com 3 Si4431BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 50 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 40 30 0.0 20 -0.2 10 -0.4 -50 -25 0 25 50 75 100 125 150 0 10- 3 10- 2 10- 1 1 10 100 600 TJ - Temperature (_C) Time (sec) Safe Operating Area 100 rDS(on) Limited IDM Limited 10 I D - Drain Current (A) P(t) = 0.0001 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 1 P(t) = 10 dc 0.1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72092 S-22437—Rev. A, 20-Jan-03 Si4431BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72092 S-22437—Rev. A, 20-Jan-03 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1