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SI4434DY-RC

SI4434DY-RC

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    SI4434DY-RC - R-C Thermal Model Parameters - Vishay Siliconix

  • 数据手册
  • 价格&库存
SI4434DY-RC 数据手册
Si4434DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 4.6811 22.4894 38.0947 14.3700 Ambient 4.7707 m 35.3707 m 2.0586 300.2025 m Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot 891.0923 m 4.0712 10.1982 5.7147 Foot 1.3179 m 17.9041 m 142.5144 m 27.2659 m Thermal Capacitance (Joules/°C) This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74096 Revision 31-Aug-05 www.vishay.com 1 Si4434DY_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4 Note: NA indicates not applicable Ambient 9.2689 13.5460 20.3323 36.3667 Ambient 7.1986 m 23.1430 m 73.9096 m 1.9824 Case N/A N/A N/A N/A Case N/A N/A N/A N/A Foot 1.3810 9.8812 5.9800 3.6972 Foot 1.8920 m 8.7357 m 90.2266 m 347.4011 m Thermal Capacitance (Joules/°C) Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 74096 Revision 31-Aug-05 Si4434DY_RC Vishay Siliconix Document Number: 74096 Revision 31-Aug-05 www.vishay.com 3
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