SI4451DY

Si4451DY New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.00825 @ VGS = - 4.5 V - 12 0.01025 @ VGS = - 2.5 V 0.013 @ VGS = - 1.8 V FEATURES ID (A) - 14 - 13 - 12 D TrenchFETr Power MOSFET APPLICATION D Load Switch D Battery Switch S SO-8 S S S G 1 2 3 4 Top View D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 11 IDM IS - 2.7 3.0 1.9 - 55 to 150 - 40 - 1.35 1.5 0.95 W _C -8 A Symbol VDS VGS 10 secs Steady State - 12 "8 Unit V - 14 - 10 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72115 S-03160—Rev. A, 17-Feb-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 33 70 17 Maximum 42 85 21 Unit _C/W 1 Si4451DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 850 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 14 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 13 A VGS = - 1.8 V, ID = - 12 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 10 V, ID = - 14 A IS = - 2.7 A, VGS = 0 V - 30 0.0065 0.008 0.0105 55 - 0.6 - 1.1 0.00825 0.01025 0.013 S V W - 0.40 - 0.8 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = - 2.7 A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 4.5 V, ID = - 14 A 81 8.6 23.4 3.0 55 125 315 235 185 85 190 480 360 300 ns W 120 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 5 thru 2 V 32 I D - Drain Current (A) 1.5 V 24 I D - Drain Current (A) 32 40 Transfer Characteristics 24 16 16 TC = 125_C 8 25_C - 55_C 8 0 0 1 2 3 4 5 0 0.0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72115 S-03160—Rev. A, 17-Feb-03 2 Si4451DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.025 r DS(on) - On-Resistance ( W ) 9000 Vishay Siliconix Capacitance C - Capacitance (pF) 0.020 7200 Ciss 0.015 VGS = 1.8 V 0.010 VGS = 2.5 V 5400 3600 Coss 1800 Crss 0.005 VGS = 4.5 V 0.000 0 8 16 24 32 40 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 14 A 1.3 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 14 A 1.2 4 r DS(on) - On-Resistance (W ) (Normalized) 42 63 84 105 5 1.1 3 1.0 2 1 0.9 0 0 21 Qg - Total Gate Charge (nC) 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 100 0.040 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.032 ID = 14 A 0.024 0.016 1 TJ = 25_C 0.008 0.1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72115 S-03160—Rev. A, 17-Feb-03 www.vishay.com 3 Si4451DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 850 mA 0.2 Power (W) 40 30 0.1 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 Time (sec) 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 1 ms 100 ms 1 1s 10 s 0.1 TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72115 S-03160—Rev. A, 17-Feb-03 Si4451DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72115 S-03160—Rev. A, 17-Feb-03 www.vishay.com 5