SI4453DY

Si4453DY New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0065 @ VGS = - 4.5 V - 12 0.00775 @ VGS = - 2.5 V 0.01025 @ VGS = - 1.8 V FEATURES ID (A) - 14 - 13 - 12 D TrenchFETr Power MOSFET APPLICATIONS D Load Switch D Battery Switch S SO-8 S S S G 1 2 3 4 Top View D Ordering Information: Si4453DY Si4453DY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 11.5 IDM IS - 2.7 3.0 1.9 - 55 to 150 - 50 - 1.36 1.5 0.95 W _C -8 A Symbol VDS VGS 10 secs Steady State - 12 "8 Unit V - 14 - 10 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72175 S-03849—Rev. A, 28-Apr-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 33 70 16 Maximum 42 84 21 Unit _C/W 1 Si4453DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 600 mA VDS = 0 V, VGS = "8 V VDS = - 9.6 V, VGS = 0 V VDS = - 9.6 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 14 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 13 A VGS = - 1.8 V, ID = - 12 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 6 V, ID = - 14 A IS = - 2.7 A, VGS = 0 V - 30 0.0051 0.0062 0.0082 80 - 0.6 - 1.1 0.0065 0.00775 0.01025 S V W - 0.4 - 0.9 "100 -1 - 10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Resistance Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf Rg trr IF = - 2.1 A, di/dt = 100 A/ms VDD = - 6 V, RL = 6 W V, ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 6 V, VGS = - 5 V, ID = - 14 A 110 15 27.5 110 235 410 285 3.6 180 270 170 350 620 430 W ns ns 165 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 5 thru 2 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 1.5 V 30 20 20 TC = 125_C 10 25_C - 55_C 10 0 0 1 2 3 4 5 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 72175 S-03849—Rev. A, 28-Apr-03 2 Si4453DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.015 r DS(on) - On-Resistance ( W ) 12000 Ciss Vishay Siliconix Capacitance C - Capacitance (pF) 0.012 VGS = 1.8 V 0.009 VGS = 2.5 V 0.006 VGS = 4.5 V 0.003 10000 8000 6000 Coss Crss 4000 2000 0.000 0 8 16 24 32 40 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 14 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 14 A 1.4 4 r DS(on) - On-Resistance (W ) (Normalized) 52 78 104 130 5 1.2 3 1.0 2 1 0.8 0 0 26 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.030 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C r DS(on) - On-Resistance ( W ) 10 0.024 0.018 ID = 14 A TJ = 25_C 1 0.012 0.006 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0.0 1.6 3.2 4.8 6.4 8.0 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72175 S-03849—Rev. A, 28-Apr-03 www.vishay.com 3 Si4453DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 100 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) ID = 600 mA 0.2 Power (W) 80 60 0.0 40 - 0.2 20 - 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 100 ms 1 1s 10 s 0.1 TC = 25_C Single Pulse dc 1 ms 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 4 Document Number: 72175 S-03849—Rev. A, 28-Apr-03 Si4453DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72175 S-03849—Rev. A, 28-Apr-03 www.vishay.com 5