SI4463BDY-E3

Si4463BDY New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.011 @ VGS = −10 V −20 0.014 @ VGS = −4.5 V 0.020 @ VGS = −2.5 V ID (A) −13.7 −12.3 −10.3 S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4463BDY—E3 (Lead Free) Si4463BDY-T1—E3 (Lead Free with Tape and Reel) 8 7 6 5 D D D D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −20 "12 Unit V −13.7 −11.1 −50 −2.7 3.0 1.9 −55 to 150 −9.8 −7.9 A −1.36 1.5 0.95 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72789 S-40433—Rev. A, 15-Mar-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 35 70 17 Maximum 42 84 21 Unit _C/W 1 Si4463BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "12 V VDS = −20 V, VGS = 0 V VDS = −20 V, VGS = 0 V, TJ = 70_C VDS = −5 V, VGS = −4.5 V VGS = −10 V, ID = −13.7 A Drain-Source On-State Resistancea rDS(on) VGS = −4.5 V, ID = −12.3 A VGS = −2.5 V, ID = −5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = −10 V, ID = −13.7 A IS = −2.7 A, VGS = 0 V −30 0.0085 0.010 0.015 44 −0.7 −1.1 0.011 0.014 0.020 S V W −0.6 −1.4 "100 −1 −10 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = −2.3 A, di/dt = 100 A/ms VDD = −10 V, RL = 10 W V, ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W f = 1 MHz VDS = −10 V, VGS = −4.5 V, ID = −13.7 A 37 8.7 11 2.7 35 60 115 75 50 55 90 170 115 75 ns W 56 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 2.5 V 40 I D − Drain Current (A) I D − Drain Current (A) 40 50 Transfer Characteristics 30 2V 20 30 20 TC = 125_C 10 25_C 0 0.0 −55_C 0.5 1.0 1.5 2.0 2.5 10 1.5 V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72789 S-40433—Rev. A, 15-Mar-04 www.vishay.com 2 Si4463BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.04 r DS(on) − On-Resistance ( W ) 5000 Vishay Siliconix Capacitance 0.03 C − Capacitance (pF) 4000 Ciss 3000 0.02 VGS = 2.5 V VGS = 4.5 V 2000 Coss 1000 0.01 VGS = 10 V 0.00 0 10 20 30 40 50 Crss 0 0 4 8 12 16 20 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 5 V GS − Gate-to-Source Voltage (V) VDS = 10 V ID = 13.7 A 4 rDS(on) − On-Resiistance (Normalized) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 −50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 13.7 A 3 2 1 0 0 5 10 15 20 25 30 35 40 Qg − Total Gate Charge (nC) −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.05 On-Resistance vs. Gate-to-Source Voltage ID = 5 A r DS(on) − On-Resistance ( W ) 0.04 ID = 13.7 A 0.03 I S − Source Current (A) TJ = 150_C 10 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72789 S-40433—Rev. A, 15-Mar-04 www.vishay.com 3 Si4463BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 50 Single Pulse Power, Junction-to-Ambient 0.4 V GS(th) Variance (V) ID = 250 mA Power (W) 0.2 40 30 0.0 20 −0.2 10 −0.4 −50 −25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ − Temperature (_C) 100 rDS(on) Limited 10 I D − Drain Current (A) Safe Operating Area IDM Limited P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 1 ID(on) Limited 0.1 TC = 25_C Single Pulse BVDSS Limited P(t) = 10 dc 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72789 S-40433—Rev. A, 15-Mar-04 Si4463BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72789 S-40433—Rev. A, 15-Mar-04 www.vishay.com 5