SI4470EY

Si4470EY Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A) 12.7 11.7 rDS(on) (W) 0.011 @ VGS = 10 V 0.013 @ VGS = 6.0 V D TrenchFETr Power MOSFETS D Extended Temperature Range APPLICATION D Primary Side Switch D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4470EY Si4470EY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanch Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 60 "20 12.7 Steady State Unit V 9.0 7.5 50 50 A ID IDM IAS IS PD TJ, Tstg 10.6 3.1 3.75 2.6 - 55 to 175 1.5 1.85 1.3 W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71606 S-03951—Rev. B, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 33 65 17 Maximum 40 80 21 Unit _C/W 1 Si4470EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 12 A rDS( ) DS(on) VGS = 6.0 V, ID = 10 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 15 V, ID = 10 A IS = 3.0 A, VGS = 0 V 50 0.009 0.0105 50 0.75 1.2 0.011 0.013 W S V 2.0 "100 1 5 V nA mA A Symbol Test Condition Min Typ Max Unit Drain-Source On-State Drain Source On State Resistancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.0 A, di/dt = 100 A/ms VDD = 30 V, RL = 30 W V, ID ^ 1.0 A, VGEN = 10 V, RG = 6 W 0.25 VDS = 30 V, VGS = 10 V, ID = 12 A 46 11.5 11.5 0.85 16 12 50 30 40 1.4 25 18 75 45 60 ns W 57 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 30 20 20 TC = 125_C 10 25_C - 55_C 0 10 2, 3 V 0 0 2 4 6 8 10 4V 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71606 S-03951—Rev. B, 26-May-03 www.vishay.com 2 Si4470EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.020 r DS(on) - On-Resistance ( W ) 4000 3500 C - Capacitance (pF) 0.015 VGS = 6 V 0.010 VGS = 10 V 3000 2500 2000 1500 1000 500 0.000 0 10 20 30 40 50 0 0 15 30 45 60 Crss Coss Ciss Capacitance 0.005 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 5 A 8 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 0 10 20 30 40 50 Qg - Total Gate Charge (nC) 0.0 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5 A 6 4 2 r DS(on) - On-Resistance (W ) (Normalized) - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 100 0.10 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.08 ID = 5 A 0.06 I S - Source Current (A) TJ = 150_C 10 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71606 S-03951—Rev. B, 26-May-03 www.vishay.com 3 Si4470EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 60 50 ID = 250 mA 0.2 Power (W) 40 Single Pulse Power 0.6 V GS(th) Variance (V) - 0.2 30 20 - 0.6 - 1.0 10 - 1.4 - 50 - 25 0 25 50 75 100 125 150 175 0 0.01 0.1 1 Time (sec) 10 100 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 1000 www.vishay.com 4 Document Number: 71606 S-03951—Rev. B, 26-May-03