SI4486EY-T1

Si4486EY Vishay Siliconix N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.025 @ VGS = 10 V 0.028 @ VGS = 6.0 V ID (A) 7.9 7.5 D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4486EY Si4486EY-T1 (with Tape and Reel) 8 7 6 5 D D D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Maximum Power Dissipationa Operating Junction and Storage Temperature Range Conduction)a TA = 25_C TA = 85_C L = 0 1 mH 0.1 TA = 25_C TA = 85_C Symbol VDS VGS 10 secs 100 "20 7.9 Steady State Unit V 5.4 4.2 40 30 45 mJ 1.5 1.8 1.1 - 55 to 175 W _C A A ID IDM IAR EAR IS PD TJ, Tstg 6.1 3.1 3.8 2.3 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71234 S-03951—Rev. B, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 33 70 17 Maximum 40 85 21 Unit _C/W 2-1 Si4486EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistance Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 7.9 A VGS = 6.0 V, ID = 7.5 A VDS = 15 V, ID = 7.9 A IS = 3.1 A, VGS = 0 V 40 0.021 0.023 35 0.8 1.2 0.025 0.028 S V 2 "100 1 20 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.1 A, di/dt = 100 A/ms VDD = 50 V, RL = 50 W V, ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.5 VDS = 50 V, VGS = 10 V, ID = 7.9 A 36 10 8.6 1.27 20 10 46 26 50 2.2 40 20 90 50 80 ns W 44 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 40 VGS = 10 thru 6 V 32 I D - Drain Current (A) I D - Drain Current (A) 5V 32 40 Transfer Characteristics 24 24 16 16 TC = 150_C 8 25_C - 55_C 0 8 4V 0 0 1 2 3 4 5 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71234 S-03951—Rev. B, 26-May-03 www.vishay.com 2-2 Si4486EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.04 r DS(on) - On-Resistance ( W ) 3500 3000 0.03 VGS = 6.0 V C - Capacitance (pF) Ciss 2500 2000 1500 1000 Crss 500 0.00 0 8 16 24 32 40 0 0 10 20 30 40 50 60 Coss Capacitance 0.02 VGS = 10 V 0.01 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 50 V ID = 7.9 A 8 2.6 2.3 2.0 1.7 1.4 1.1 0.8 0 0 6 12 18 24 30 36 Qg - Total Gate Charge (nC) 0.5 - 50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.9 A 6 4 2 r DS(on) - On-Resistance (W ) (Normalized) - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.08 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 175_C 10 0.06 ID = 7.9 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71234 S-03951—Rev. B, 26-May-03 www.vishay.com 2-3 Si4486EY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.5 50 Single Pulse Power 40 0.0 V GS(th) Variance (V) ID = 250 mA Power (W) 30 - 0.5 20 - 1.0 10 - 1.5 - 50 - 25 0 25 50 75 100 125 150 175 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 70_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-4 Document Number: 71234 S-03951—Rev. B, 26-May-03